Search arXivSearch

arXiv · 2208.04724

Jellybean quantum dots in silicon for qubit coupling and on-chip quantum chemistry

Abstract

The small size and excellent integrability of silicon metal-oxide-semiconductor (SiMOS) quantum dot spin qubits make them an attractive system for mass-manufacturable, scaled-up quantum processors. Furthermore, classical control electronics can be integrated on-chip, in-between the qubits, if an architecture with sparse arrays of qubits is chosen. In such an architecture qubits are either transported across the chip via shuttling, or coupled via mediating quantum systems over short-to-intermediate distances. This paper investigates the charge and spin characteristics of an elongated quantum dot -- a so-called jellybean quantum dot -- for the prospects of acting as a qubit-qubit coupler. Charge transport, charge sensing and magneto-spectroscopy measurements are performed on a SiMOS quantum dot device at mK temperature, and compared to Hartree-Fock multi-electron simulations. At low electron occupancies where disorder effects and strong electron-electron interaction dominate over the electrostatic confinement potential, the data reveals the formation of three coupled dots, akin to a tunable, artificial molecule. One dot is formed centrally under the gate and two are formed at the edges. At high electron occupancies, these dots merge into one large dot with well-defined spin states, verifying that jellybean dots have the potential to be used as qubit couplers in future quantum computing architectures.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Zeheng Wang, MengKe Feng, Santiago Serrano, William Gilbert, Ross C. C. Leon, Tuomo Tanttu, Philip Mai, Dylan Liang, Jonathan Y. Huang, Yue Su, Wee Han Lim, Fay E. Hudson, Christopher C. Escott, Andrea Morello, Chih Hwan Yang, Andrew S. Dzurak, Andre Saraiva, Arne Laucht. 2022-08-08. Jellybean quantum dots in silicon for qubit coupling and on-chip quantum chemistry. https://doi.org/10.1002/adma.202208557

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Nanoscale Dipolar Fields in Artificial Spin Ice Probed by Scanning NV Magnetometry

We investigate dipolar coupling fields in two square-lattice artificial spin ice (ASI) systems with different lattice constants using scanning probe microscopy based on a single nitrogen-vacancy (NV) center in diamond. This technique offers unprecedented spatial resolution, operates under ambient condition, and provides quantitative stray field measurements, making it uniquely suited for studying nanoscale magnetic textures. Our approach combines fluorescence quenching imaging and continuous-wave optically detected magnetic resonance (cODMR). A comparison of the two ASI samples, which differ in their lattice constants of 1000 nm and 910 nm respectively, reveals differences in the appearance of ice-rule violations - deviations from the lowest energy configuration in ASI vertices. We attribute these variations to varying coupling strengths dictated by the lattice constant. From the cODMR data, we extract both axial and transverse components of the local magnetic field relative to the NV axis. Micromagnetic modeling of these measurements allows for an iterative determination of the external magnetic field orientation, the detection of subtle magnetization tilts induced by weak external fields (well below the nanomagnets' switching threshold), and an estimation of the effective saturation magnetization, thereby accounting for deviations in nanomagnet dimensions. These findings provide crucial insights into the tunable magnetic interactions in ASI, paving the way for the design of advanced magnonic and spintronic devices.

cond-mat.mes-hall

Plasmon-driven electron-hole pair formation in a non-equilibrium Fermi liquid

Collective modes in Fermi liquids are usually regarded as dissipation channels that relax electronic excitations through Landau damping. Whether such modes can instead mediate the formation of correlated electronic states under non-equilibrium conditions remains an open question. Here, we show that under optical photo-doping, a bulk plasmon can drive correlated inter-band transfer within a transient electronic continuum. Using time- and angle-resolved photoemission spectroscopy (Tr-ARPES) on EuCd$_2$As$_2$ supported by electronic structure calculations, we observe that at high excitation density, plasmons transfer energy from a weakly dispersing bulk band into unoccupied surface states. This bulk-to-surface redistribution stabilizes a long-lived, energy-localized spectral feature consistent with a Mahan exciton. Our results reveal a non-equilibrium regime of Fermi-liquid physics in which collective modes do not merely dissipate energy, but also stabilize correlated bound states.

cond-mat.mes-hall

Band offsets in InP/ZnSe nanocrystals evaluated using two-photon transitions analysis

We present a semi-analytical theoretical kp-study of the energy structure and optical transitions in spherical core-shell InP/ZnSe nanocrystals. We use the eight-band Kane model and the six-band Luttinger Hamiltonian in the spherical approximation to calculate the electron and hole energy spectra, respectively. The influence of the Coulomb interaction is considered perturbatively. The one- and two-photon absorption spectra are calculated as functions of the band offsets between the InP core and ZnSe shell. Exciton states responsible for the main features in the two-photon absorption spectra of InP/ZnSe nanocrystals are identified and the spectral dependence of the linear-circular dichroism signal is predicted. We show that in the presence of inhomogeneous broadening, the transition to the ground two-photon-active exciton state can be hidden behind intense transitions to higher-lying states. A comparison of the calculated one- and two-photon absorption spectra with the available experimental data shows that, depending on the lattice strain in the InP core, the range of possible valence band offsets is 0.85-1 eV. The determined range exceeds the natural valence band offset of 0.57 eV and indicates the presence of electric dipoles formed by the preferential Zn-P bonds at the InP/ZnSe heterointerface.

cond-mat.mes-hall