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arXiv · 2209.01853

Probing charge noise in few electron CMOS quantum dots

Cameron Spence·Bruna Cardoso-Paz·Vincent Michal·Emmanuel Chanrion·David J. Niegemann·Baptiste Jadot·Pierre-André Mortemousque·Bernhard Klemt·Vivien Thiney·Benoit Bertrand·Louis Hutin·Christopher Bäuerle·Franck Balestro·Maud Vinet·Yann-Michel Niquet·Tristan Meunier·Matias Urdampilleta
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Abstract

Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication. Here we demonstrate in-depth characterization of the charge noise environment experienced by a quantum dot in a CMOS-fabricated silicon nanowire. We probe the charge noise for different quantum dot configurations, finding that it is possible to tune the charge noise over two orders of magnitude, ranging from 1 ueV^2 to 100 ueV^2. In particular, we show that the top interface and the reservoirs are the main sources of charge noise and their effect can be mitigated by controlling the quantum dot extension. Additionally, we demonstrate a novel method for the measurement of the charge noise experienced by a quantum dot in the few electron regime. We measure a comparatively higher charge noise value of 40 ueV^2 at the first electron, and demonstrate that the charge noise is highly dependent on the electron occupancy of the quantum dot.

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Cameron Spence, Bruna Cardoso-Paz, Vincent Michal, Emmanuel Chanrion, David J. Niegemann, Baptiste Jadot, Pierre-André Mortemousque, Bernhard Klemt, Vivien Thiney, Benoit Bertrand, Louis Hutin, Christopher Bäuerle, Franck Balestro, Maud Vinet, Yann-Michel Niquet, Tristan Meunier, Matias Urdampilleta. 2022-09-05. Probing charge noise in few electron CMOS quantum dots. https://arxiv.org/abs/2209.01853

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