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arXiv · 2209.11731

Memory and transduction prospects for silicon T centre devices

Daniel B Higginbottom·Faezeh Kimiaee Asadi·Camille Chartrand·Jia-Wei Ji·Laurent Bergeron·Michael L. W. Thewalt·Christoph Simon·Stephanie Simmons
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Abstract

The T centre, a silicon-native spin-photon interface with telecommunications-band optical transitions and long-lived microwave qubits, offers an appealing new platform for both optical quantum memory and microwave to optical telecommunications band transduction. A wide range of quantum memory and transduction schemes could be implemented on such a platform, with advantages and disadvantages that depend sensitively on the ensemble properties. In this work we characterize T centre spin ensembles to inform device design. We perform the first T ensemble optical depth measurement and calculate the improvement in centre density or resonant optical enhancement required for efficient optical quantum memory. We further demonstrate a coherent microwave interface by coherent population trapping (CPT) and Autler-Townes splitting (ATS). We then determine the most promising microwave and optical quantum memory protocol for such ensembles. By estimating the memory efficiency both in free-space and in the presence of a cavity, we show that efficient optical memory is possible with forecast densities. Finally, we formulate a transduction proposal and discuss the achievable efficiency and fidelity.

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Daniel B Higginbottom, Faezeh Kimiaee Asadi, Camille Chartrand, Jia-Wei Ji, Laurent Bergeron, Michael L. W. Thewalt, Christoph Simon, Stephanie Simmons. 2022-09-23. Memory and transduction prospects for silicon T centre devices. https://arxiv.org/abs/2209.11731

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