Search arXivSearch

arXiv · 2210.06948

3D printing of nanoceramics: Present status and future perspectives

Abstract

In materials research involving additive manufacturing (AM)-based techniques for fabrication of a wide variety of materials, the latest trend at present is to focus largely on 3D printing (3DP) of nanoceramics, which at present is highly challenging, from both fundamental and industrial viewpoints inspite of the tremendous versatility offered by these techniques in terms of addressing design complexities. The two main reasons for the same are: low density and poor mechanical properties of nanoceramic parts fabricated using 3DP techniques. The fundamental reason behind the two aforementioned features of 3DP-fabricated nanoceramic parts is the huge extent of microstructural inhomogeneity arising primarily due to variation in cooling rates during point by point, line by line or layer by layer deposition methodology followed in 3DP techniques, leading to a number of defects in the microstructure. Moreover, the industrial application of nanoceramic parts manufactured using 3DP techniques, is rather limited, primarily owing to the high manufacturing cost associated with these nanoceramic parts. Although, in the last ten years, there has been a considerable volume of work on 3DP-based techniques for manufacturing ceramic parts with enhanced densities and improved mechanical properties, however, there is limited understanding on the correlation of microstructure of 3DP-fabricated nanoceramic components with the mechanical properties. The present review is aimed to review some of the most commonly used 3DP techniques for the fabrication of nanoceramics and provide an overview of the future perspectives, associated with the necessity towards developing a systematic structure-property correlation through correlative characterisation methodology in these materials.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Mainak Saha. 2022-09-01. 3D printing of nanoceramics: Present status and future perspectives. https://doi.org/10.1016/b978-0-323-99626-6.00002-0

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring vacancy-type defect density in monolayer semiconductors

Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to control these properties. However, experimental quantification of the density of defects, whether deliberately introduced or inherent, is very difficult in these atomically thin materials. Here we show that helium atom micro-diffraction can be used to measure the defect density in ~15x20um monolayer MoS2, a prototypical 2D semiconductor, quickly and easily compared to standard methods. We present a simple analytic model, the lattice gas equation, that captures the relationship between atomic Bragg diffraction intensity and defect density. The model, combined with ab initio scattering calculations, shows that our technique can immediately be applied to a wide range of 2D materials, independent of sample chemistry or structure. Additionally, wafer-scale characterization is immediately possible.

physics.app-ph

Compact Modeling of Oxide-Semiconductor, 2D Material, Carbon Nanotube, and Cryogenic Transistors with Experiment Verification

This paper presents a unified compact model for emerging transistor technologies, including oxide-semiconductor field-effect transistors (OSFETs), 2D material FETs (2DFETs), carbon nanotube FETs (CNFETs), and cryogenic MOSFETs. A unified charge-density formulation is developed to account for quantum confinement, trap charges, and band-tail states in channel charge calculations. A physics-based transport model is introduced to seamlessly capture carrier transport from the long-channel diffusive regime to the short-channel ballistic limit. Scaling models are incorporated to accurately describe 2D electrostatic effects. Cryogenic operation is modeled through the inclusion of band-tail states and temperature-dependent mobility and threshold voltage. The proposed model is validated against experimental data from the fabricated OSFETs with multiple channel lengths and published measurements of 2DFETs, CNFETs, and cryogenic MOSFETs. Excellent agreement is demonstrated across diverse device architectures, operating conditions, and material systems.

physics.app-ph

Multiplexing approaches to thermoradiative signatureless communications

Using mid-infrared emission from semiconductor devices for covert communications remains a relatively unexplored and yet promising opportunity. The phenomenon of negative luminescence allows for a method of signatureless covert communications where the net infrared emission of an emitting optoelectronic device is balanced to be identical to the ambient thermal background. In this work we provide a practical demonstration of covert data transfer over a thermoradiative channel with data rates up to 100 kbps. In addition, we demonstrate several additional multiplexing techniques that make the proposed thermoradiative communications method more secure against interception by achieving zero instantaneous optical emission, while remaining detectable if a sufficiently spatially or spectrally discerning observation is utilised. Finally, we discuss various application scenarios in which the proposed methods can be used to achieve secure signatureless communications.

physics.app-ph