Electronic and optical properties of b-AsP quantum dots and quantum rings under the electric and magnetic fields

Chen Li; Xuefei Yan; Jinluo Cheng; Weiqi Li

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arXiv · 2212.01846

Electronic and optical properties of b-AsP quantum dots and quantum rings under the electric and magnetic fields

Chen Li·Xuefei Yan·Jinluo Cheng·Weiqi Li

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Abstract

In this work, we investigate the electronic and optical properties of the b-AsP quantum dots(QDs) and quantum rings(QRs) with different edge types in the presence of an in-plane electric field and a perpendicular magnetic field utilizing the tight-binding method. Our calculations show that the electronic and optical properties of edge states largely depend on the edge types. By adjusting the intensity of the electric field or magnetic field, the probability density can be effectively tuned. In particular, under an in-plane electric field, novel edge states emerge in rhombus QDs and QRs with δ atoms, and transitions happen between these novel edge states and bulk states in the conduction band region, which is illustrated by distinct and evenly separated peaks in the optical absorption spectra. This work might exploit a potential system to implement quantum state transfer among two-dimensional material quantum dots.

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Chen Li, Xuefei Yan, Jinluo Cheng, Weiqi Li. 2022-12-04. Electronic and optical properties of b-AsP quantum dots and quantum rings under the electric and magnetic fields. https://arxiv.org/abs/2212.01846

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