Search arXivSearch

arXiv · 2212.12047

Deep learning for size-agnostic inverse design of random-network 3D printed mechanical metamaterials

Abstract

Practical applications of mechanical metamaterials often involve solving inverse problems where the objective is to find the (multiple) microarchitectures that give rise to a given set of properties. The limited resolution of additive manufacturing techniques often requires solving such inverse problems for specific sizes. One should, therefore, find multiple microarchitectural designs that exhibit the desired properties for a specimen with given dimensions. Moreover, the candidate microarchitectures should be resistant to fatigue and fracture, meaning that peak stresses should be minimized as well. Such a multi-objective inverse design problem is formidably difficult to solve but its solution is the key to real-world applications of mechanical metamaterials. Here, we propose a modular approach titled 'Deep-DRAM' that combines four decoupled models, including two deep learning models (DLM), a deep generative model (DGM) based on conditional variational autoencoders (CVAE), and direct finite element (FE) simulations. Deep-DRAM (deep learning for the design of random-network metamaterials) integrates these models into a unified framework capable of finding many solutions to the multi-objective inverse design problem posed here. The integrated framework first introduces the desired elastic properties to the DGM, which returns a set of candidate designs. The candidate designs, together with the target specimen dimensions are then passed to the DLM which predicts their actual elastic properties considering the specimen size. After a filtering step based on the closeness of the actual properties to the desired ones, the last step uses direct FE simulations to identify the designs with the minimum peak stresses.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Helda Pahlavani, Kostas Tsifoutis-Kazolis, Prerak Mody, Jie Zhou, Mohammad J. Mirzaali, Amir A. Zadpoor. 2022-12-22. Deep learning for size-agnostic inverse design of random-network 3D printed mechanical metamaterials. https://arxiv.org/abs/2212.12047

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring vacancy-type defect density in monolayer semiconductors

Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to control these properties. However, experimental quantification of the density of defects, whether deliberately introduced or inherent, is very difficult in these atomically thin materials. Here we show that helium atom micro-diffraction can be used to measure the defect density in ~15x20um monolayer MoS2, a prototypical 2D semiconductor, quickly and easily compared to standard methods. We present a simple analytic model, the lattice gas equation, that captures the relationship between atomic Bragg diffraction intensity and defect density. The model, combined with ab initio scattering calculations, shows that our technique can immediately be applied to a wide range of 2D materials, independent of sample chemistry or structure. Additionally, wafer-scale characterization is immediately possible.

physics.app-ph

Compact Modeling of Oxide-Semiconductor, 2D Material, Carbon Nanotube, and Cryogenic Transistors with Experiment Verification

This paper presents a unified compact model for emerging transistor technologies, including oxide-semiconductor field-effect transistors (OSFETs), 2D material FETs (2DFETs), carbon nanotube FETs (CNFETs), and cryogenic MOSFETs. A unified charge-density formulation is developed to account for quantum confinement, trap charges, and band-tail states in channel charge calculations. A physics-based transport model is introduced to seamlessly capture carrier transport from the long-channel diffusive regime to the short-channel ballistic limit. Scaling models are incorporated to accurately describe 2D electrostatic effects. Cryogenic operation is modeled through the inclusion of band-tail states and temperature-dependent mobility and threshold voltage. The proposed model is validated against experimental data from the fabricated OSFETs with multiple channel lengths and published measurements of 2DFETs, CNFETs, and cryogenic MOSFETs. Excellent agreement is demonstrated across diverse device architectures, operating conditions, and material systems.

physics.app-ph

Multiplexing approaches to thermoradiative signatureless communications

Using mid-infrared emission from semiconductor devices for covert communications remains a relatively unexplored and yet promising opportunity. The phenomenon of negative luminescence allows for a method of signatureless covert communications where the net infrared emission of an emitting optoelectronic device is balanced to be identical to the ambient thermal background. In this work we provide a practical demonstration of covert data transfer over a thermoradiative channel with data rates up to 100 kbps. In addition, we demonstrate several additional multiplexing techniques that make the proposed thermoradiative communications method more secure against interception by achieving zero instantaneous optical emission, while remaining detectable if a sufficiently spatially or spectrally discerning observation is utilised. Finally, we discuss various application scenarios in which the proposed methods can be used to achieve secure signatureless communications.

physics.app-ph