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arXiv · 2302.02305

Probabilistic-Bits based on Ferroelectric Field-Effect Transistors for Stochastic Computing

Sheng Luo·Yihan He·Baofang Cai·Xiao Gong·Gengchiau Liang
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Abstract

A probabilistic-bit (p-bit) is the fundamental building block in the circuit network of a stochastic computing, and it could produce a continuous random bit-stream with tunable probability. Utilizing the stochasticity in few-domain ferroelectric material(FE), we propose for the first time, the p-bits based on ferroelectric FET. The stochasticity of the FE p-bits stems from the thermal noise-induced lattice vibration, which renders dipole fluctuations and is tunable by an external electric field. The impact of several key FE parameters on p-bits' stochasticity is evaluated, where the domain properties are revealed to play crucial roles. Furthermore, the integer factorization based on FE p-bits circuit network is performed to verify its functionality, and the accuracy is found to depend on FE p-bits' stochasticity. The proposed FE p-bits possess the advantages of both extremely low hardware coast and the compatibility with CMOS-technology, rendering it a promising candidate for stochastic computing applications.

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Sheng Luo, Yihan He, Baofang Cai, Xiao Gong, Gengchiau Liang. 2023-02-05. Probabilistic-Bits based on Ferroelectric Field-Effect Transistors for Stochastic Computing. https://doi.org/10.1109/led.2023.3285525

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