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arXiv · 2302.13735

Anomalous Nernst effect in a ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$

Chen Ran·Xinrun Mi·Junying Shen·Honghui Wang·Kunya Yang·Yan Liu·Guiwen Wang·Guoyu Wang·Youguo Shi·Aifeng Wang·Yisheng Chai·Xiaolong Yang·Mingquan He·Xin Tong·Xiaoyuan Zhou
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Abstract

In the ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$, colossal magnetoresistance (CMR) arises below $T_\mathrm{c}=78$ K due to the interplay of magnetism and topological nodal-line fermiology. The Berry curvature associated with the topological nodal-line is expected to produce an anomalous Nernst effect. Here, we present sizable anomalous Nernst signal in Mn$_3$Si$_2$Te$_6$ below $T_\mathrm{c}$. In the low-magnetic-field region where CMR is most apparent, the scaling ratio between the Nernst signal and magnetization is significantly enhanced compared to that in conventional magnetic materials. The enhanced Nernst effect and CMR likely share the same mechanisms, which are closely linked to the nodal-line topology.

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Chen Ran, Xinrun Mi, Junying Shen, Honghui Wang, Kunya Yang, Yan Liu, Guiwen Wang, Guoyu Wang, Youguo Shi, Aifeng Wang, Yisheng Chai, Xiaolong Yang, Mingquan He, Xin Tong, Xiaoyuan Zhou. 2023-02-27. Anomalous Nernst effect in a ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$. https://doi.org/10.1103/physrevb.108.125103

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