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arXiv · 2303.14431

Odd symmetry planar Hall effect: A method of detecting current-induced in-plane magnetization switching

Raghvendra Posti·Abhishek Kumar·Mayank Baghoria·Bhanu Prakash·Dhananjay Tiwari·Debangsu Roy
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Abstract

Type-x device attracts considerable interest in the field of spintronics due to its robust spin-orbit torque (SOT) induced magnetization switching, and easy deposition technique. However, universally applicable and straightforward detection of type-X magnetization reversal is still elusive, unlike type-Z switching, which employs DC-based anomalous Hall effect measurement. Here, we, demonstrated that the odd planar Hall signal (O-PHV) exhibits an odd symmetry with the application of an external magnetic field which motivates us to develop a reading mechanism for detecting magnetization switching of in-plane magnetized type-X devices. We verified our DC-based reading mechanism in the Pt/Co/NiFe/Pt stack where a thin Co layer is inserted to create dissimilar interfaces about the NiFe layer. Remarkably, the current-induced in-plane fields are found to be significantly large in Pt/Co/NiFe/Pt stack. Further, we successfully employed the O-PHV method to detect the current-induced magnetization switching. The pure DC nature of the writing and reading mechanism of our proposed type-X detection technique through O-PHV makes it the easiest in-plane magnetization detection technique. Moreover, the high repeatability and easy detection of our proposed method will open new avenues toward in-plane SOT switching based memory devices and sensors.

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Raghvendra Posti, Abhishek Kumar, Mayank Baghoria, Bhanu Prakash, Dhananjay Tiwari, Debangsu Roy. 2023-03-25. Odd symmetry planar Hall effect: A method of detecting current-induced in-plane magnetization switching. https://doi.org/10.1063/5.0143904

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