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arXiv · 2304.13227

An rf Quantum Capacitance Parametric Amplifier

A. El Kass·C. T. Jin·J. D. Watson·G. C. Gardner·S. Fallahi·M. J. Manfra·D. J. Reilly
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Abstract

We demonstrate a radio-frequency parametric amplifier that exploits the gate-tunable quantum capacitance of an ultra high mobility two dimensional electron gas (2DEG) in a GaAs heterostructure at cryogenic temperatures. The prototype narrowband amplifier exhibits a gain greater than 20 dB up to an input power of - 66 dBm (1 dB compression), and a noise temperature TN of 1.3 K at 370 MHz. In contrast to superconducting amplifiers, the quantum capacitance parametric amplifier (QCPA) is operable at tesla-scale magnetic fields and temperatures ranging from milli kelvin to a few kelvin. These attributes, together with its low power (microwatt) operation when compared to conventional transistor amplifiers, suggest the QCPA may find utility in enabling on-chip integrated readout circuits for semiconductor qubits or in the context of space transceivers and radio astronomy instruments.

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A. El Kass, C. T. Jin, J. D. Watson, G. C. Gardner, S. Fallahi, M. J. Manfra, D. J. Reilly. 2023-04-26. An rf Quantum Capacitance Parametric Amplifier. https://arxiv.org/abs/2304.13227

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