Useful Circuit Analogies to Model THz Field Effect Transistors

Adam Gleichman; Kindred Griffis; Sergey V. Baryshev

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arXiv · 2307.07488

Useful Circuit Analogies to Model THz Field Effect Transistors

Adam Gleichman·Kindred Griffis·Sergey V. Baryshev

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Abstract

The electron fluid model in plasmonic field effect transistor (FET) operation is related to the behavior of a radio-frequency (RF) cavity. This new understanding led to finding the relationships between physical device parameters and equivalent circuit components in traditional parallel resistor, inductor, and capacitor (RLC) and transmission models for cavity structures. Verification of these models is performed using PSpice to simulate the frequency dependent voltage output and compare with analytical equations for the drain potential as a function of frequency.

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Adam Gleichman, Kindred Griffis, Sergey V. Baryshev. 2023-07-14. Useful Circuit Analogies to Model THz Field Effect Transistors. https://arxiv.org/abs/2307.07488

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