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arXiv · 2310.00007

Semicoductor-metallic hybrid nano-disk laser

Abstract

In this research, semiconductor-metallic hybrid nano-disk laser based on InGaAsP multi quantum wells (MQWs) or InGaAs bulk material membranes were designed, fabricated and characterized. The quality factors of surface-plasmon-polariton (SPP) modes can be improved by introducing a transparent dielectric shield layer between the metallic cap and the gain material. The InGaAsP MQWs based semiconductor-metallic hybrid nano-laser can surpport SPP mode lasing at room temperature. With diameter of 600 nm, the lasing mode is TM-like SPP mode. Under high pumping, for nano-laser, the quantized levels in the wells and the barrier are populated. This behavior supported multi-mode lasing. The InGaAs bulk material based semiconductor-metallic hybrid nano-laser perform that the carrier density saturated the energy band and populated the higher band as well. The nano-laser also supports multi-mode lasing at room temperature. At loe temperature of 77K, the nano-laser with 400 nm diameter can support TE-like SPP mode lasing.

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Taiping Zhang. 2023-08-31. Semicoductor-metallic hybrid nano-disk laser. https://arxiv.org/abs/2310.00007

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