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arXiv · 2401.10366

Whole Device Modeling of the FuZE Sheared-Flow-Stabilized Z Pinch

I. A. M. Datta·E. T. Meier·U. Shumlak
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Abstract

The FuZE sheared-flow-stabilized Z pinch at Zap Energy is simulated using whole-device modeling employing an axisymmetric resistive magnetohydrodynamic formulation implemented within the discontinuous Galerkin WARPXM framework. Simulations show formation of Z pinches with densities of approximately 10^22 m^-3 and total DD fusion neutron rate of 10^7 per {\mu}s for approximately 2 {\mu}s. Simulation-derived synthetic diagnostics show peak currents and voltages within 10% and total yield within approximately 30% of experiment for similar plasma mass. The simulations provide insight into the plasma dynamics in the experiment and enable a predictive capability for exploring design changes on devices built at Zap Energy.

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I. A. M. Datta, E. T. Meier, U. Shumlak. 2024-01-18. Whole Device Modeling of the FuZE Sheared-Flow-Stabilized Z Pinch. https://arxiv.org/abs/2401.10366

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