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arXiv · 2402.07090

Design of a W-band High-PAE Class A&AB Power Amplifier in 150nm GaAs Technology

Jun Yan Leea·Duo Wu·Xuanrui Guoc·Mohammad Mahdi Ariannejad·Mohammad Arif Sobhan Bhuiyan·Mahdi H. Miraz
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Abstract

Nanometer scale power amplifiers (PA) at sub-THz suffer from severe parasitic effects that lead to experience limited maximum frequency and reduced power performance at the device transceiver front end. The integrated circuits researchers proposed different PA design architecture combinations at scaled down technologies to overcome these limitations. Although the designs meet the minimum requirements, the power added efficiency (PAE) of PA is still quite low. In this paper, a W-band single-ended common-source (CS) and cascode integrated 3-stage 2-way PA design is proposed. The design integrated different key design methodologies to mitigate the parasitic; such as combined Class AB and Class A stages for gain-boosting and efficiency enhancement, Wilkinson power combiner for higher output power, linearity, and bandwidth, and transmission line (TL)-based wide band matching network for better inter-stage matching and compact size. The proposed PA design is validated using UMS 150-nm GaAs pHEMT using advanced design system (ADS) simulator. The results show that the proposed PA achieved a gain of 20.1 dB, an output power of 17.2 dBm, a PAE of 33 % and a 21 GHz bandwidth at 90 GHz Sub-THz band. The PA layout consumes only 5.66 X 2.51 mm2 die space including pads. Our proposed PA design will boost the research on sub-THz integrated circuits research and will smooth the wide spread adoption of 6G in near future.

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Jun Yan Leea, Duo Wu, Xuanrui Guoc, Mohammad Mahdi Ariannejad, Mohammad Arif Sobhan Bhuiyan, Mahdi H. Miraz. 2024-02-11. Design of a W-band High-PAE Class A&AB Power Amplifier in 150nm GaAs Technology. https://doi.org/10.1007/s42341-024-00513-8

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