Search arXiv⌕ Search
Home/Archive/arXiv

arXiv · 2402.16177

Enhancement of the Environmental Stability of Perovskite Thin Films via PMMA and AZ5214-Photoresist Coatings

Kimya Fallah·Shahab Norouzian Alam·Bijan Ghafary Ghomi·Farzaneh Yekekar·Shima Taghian·Sajjad Taravati
View original source ↗Read source document ↗Export metadata ↓

Abstract

We introduce a pioneering strategy to enhance the environmental stability of perovskite thin films, a critical step forward in advancing their application in optoelectronics. Through the innovative application of matrix encapsulation techniques, we focus on the stabilization of methylammonium lead iodide (MAPbI3) and methylammonium lead bromide (MAPbBr3) films. These films are meticulously prepared via a two-step solution deposition method under controlled ambient conditions. Our approach involves the application of poly(methyl methacrylate) (PMMA) and AZ5214 photoresist layers through spin-coating, aimed at singularly encapsulating the perovskite films. This encapsulation acts as a robust hydrophobic barrier, significantly mitigating moisture ingress and simultaneously addressing the challenge of pinhole presence within the perovskite structure. Through a series of detailed characterizations-spanning scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) spectroscopy-we demonstrate that, despite the thicker nature of the AZ5214 photoresist compared to the PMMA layer, it exhibits markedly enhanced stability. Notably, the integrity and optical properties of the perovskite films are preserved for extended periods of up to 960 hours under environmental exposure. This breakthrough highlights the superior performance of AZ5214 photoresist over PMMA in prolonging the operational life of perovskite thin films, thereby offering a promising avenue for their deployment in a wide range of optoelectronic devices.

Explore related subjects

physics.app-phphysics.optics

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Kimya Fallah, Shahab Norouzian Alam, Bijan Ghafary Ghomi, Farzaneh Yekekar, Shima Taghian, Sajjad Taravati. 2024-03-08. Enhancement of the Environmental Stability of Perovskite Thin Films via PMMA and AZ5214-Photoresist Coatings. https://arxiv.org/abs/2402.16177

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Measuring vacancy-type defect density in monolayer semiconductors

Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to control these properties. However, experimental quantification of the density of defects, whether deliberately introduced or inherent, is very difficult in these atomically thin materials. Here we show that helium atom micro-diffraction can be used to measure the defect density in ~15x20um monolayer MoS2, a prototypical 2D semiconductor, quickly and easily compared to standard methods. We present a simple analytic model, the lattice gas equation, that captures the relationship between atomic Bragg diffraction intensity and defect density. The model, combined with ab initio scattering calculations, shows that our technique can immediately be applied to a wide range of 2D materials, independent of sample chemistry or structure. Additionally, wafer-scale characterization is immediately possible.

physics.app-ph↗
arXiv2026

Compact Modeling of Oxide-Semiconductor, 2D Material, Carbon Nanotube, and Cryogenic Transistors with Experiment Verification

This paper presents a unified compact model for emerging transistor technologies, including oxide-semiconductor field-effect transistors (OSFETs), 2D material FETs (2DFETs), carbon nanotube FETs (CNFETs), and cryogenic MOSFETs. A unified charge-density formulation is developed to account for quantum confinement, trap charges, and band-tail states in channel charge calculations. A physics-based transport model is introduced to seamlessly capture carrier transport from the long-channel diffusive regime to the short-channel ballistic limit. Scaling models are incorporated to accurately describe 2D electrostatic effects. Cryogenic operation is modeled through the inclusion of band-tail states and temperature-dependent mobility and threshold voltage. The proposed model is validated against experimental data from the fabricated OSFETs with multiple channel lengths and published measurements of 2DFETs, CNFETs, and cryogenic MOSFETs. Excellent agreement is demonstrated across diverse device architectures, operating conditions, and material systems.

physics.app-ph↗
arXiv2026

Multiplexing approaches to thermoradiative signatureless communications

Using mid-infrared emission from semiconductor devices for covert communications remains a relatively unexplored and yet promising opportunity. The phenomenon of negative luminescence allows for a method of signatureless covert communications where the net infrared emission of an emitting optoelectronic device is balanced to be identical to the ambient thermal background. In this work we provide a practical demonstration of covert data transfer over a thermoradiative channel with data rates up to 100 kbps. In addition, we demonstrate several additional multiplexing techniques that make the proposed thermoradiative communications method more secure against interception by achieving zero instantaneous optical emission, while remaining detectable if a sufficiently spatially or spectrally discerning observation is utilised. Finally, we discuss various application scenarios in which the proposed methods can be used to achieve secure signatureless communications.

physics.app-ph↗