Metal-semiconductor behavior along the line of stacking order change in gated multilayer graphene

Włodzimierz Jaskólski

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arXiv · 2403.11143

Metal-semiconductor behavior along the line of stacking order change in gated multilayer graphene

Włodzimierz Jaskólski

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Abstract

We investigate gated multilayer graphene with stacking order change along the armchair direction. We consider some layers cracked to release shear strain at the stacking domain wall. The energy cones of graphene overlap along the corresponding direction in the k-space, so the topological gapless states from different valleys also overlap. However, these states strongly interact and split due to atomic-scale defects caused by the broken layers, yielding an effective energy gap. We find that for some gate voltages, the gap states cross and the metallic behavior along the stacking domain wall can be restored. In particular cases, a flat band appears at the Fermi energy. We show that for small variations of the gate voltage the charge occupying this band oscillates between the outer layers.

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BibTeX RIS

Włodzimierz Jaskólski. 2024-03-17. Metal-semiconductor behavior along the line of stacking order change in gated multilayer graphene. https://arxiv.org/abs/2403.11143

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