Search arXivSearch

arXiv · 2403.20021

Interpretable Machine Learning Strategies for Accurate Prediction of Thermal Conductivity in Polymeric Systems

Abstract

Polymers, integral to advancements in high-tech fields, necessitate the study of their thermal conductivity (TC) to enhance material attributes and energy efficiency. The TC of polymers obtained by molecular dynamics (MD) calculations and experimental measurements is slow, and it is difficult to screen polymers with specific TC in a wide range. Existing machine learning (ML) techniques for determining polymer TC suffer from the problems of too large feature space and cannot guarantee very high accuracy. In this work, we leverage TCs from accessible datasets to decode the Simplified Molecular Input Line Entry System (SMILES) of polymers into ten features of distinct physical significance. A novel evaluation model for polymer TC is formulated, employing four ML strategies. The Gradient Boosting Decision Tree (GBDT)-based model, a focal point of our design, achieved a prediction accuracy of R$^2$=0.88 on a dataset containing 400 polymers. Furthermore, we used an interpretable ML approach to discover the significant contribution of quantitative estimate of drug-likeness and number of rotatable bonds features to TC, and analyzed the physical mechanisms involved. The ML method we developed provides a new idea for physical modeling of polymers, which is expected to be generalized and applied widely in constructing polymers with specific TCs and predicting all other properties of polymers.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Chunbo Lin, Han Zheng. 2024-04-01. Interpretable Machine Learning Strategies for Accurate Prediction of Thermal Conductivity in Polymeric Systems. https://arxiv.org/abs/2403.20021

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring vacancy-type defect density in monolayer semiconductors

Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to control these properties. However, experimental quantification of the density of defects, whether deliberately introduced or inherent, is very difficult in these atomically thin materials. Here we show that helium atom micro-diffraction can be used to measure the defect density in ~15x20um monolayer MoS2, a prototypical 2D semiconductor, quickly and easily compared to standard methods. We present a simple analytic model, the lattice gas equation, that captures the relationship between atomic Bragg diffraction intensity and defect density. The model, combined with ab initio scattering calculations, shows that our technique can immediately be applied to a wide range of 2D materials, independent of sample chemistry or structure. Additionally, wafer-scale characterization is immediately possible.

physics.app-ph

Compact Modeling of Oxide-Semiconductor, 2D Material, Carbon Nanotube, and Cryogenic Transistors with Experiment Verification

This paper presents a unified compact model for emerging transistor technologies, including oxide-semiconductor field-effect transistors (OSFETs), 2D material FETs (2DFETs), carbon nanotube FETs (CNFETs), and cryogenic MOSFETs. A unified charge-density formulation is developed to account for quantum confinement, trap charges, and band-tail states in channel charge calculations. A physics-based transport model is introduced to seamlessly capture carrier transport from the long-channel diffusive regime to the short-channel ballistic limit. Scaling models are incorporated to accurately describe 2D electrostatic effects. Cryogenic operation is modeled through the inclusion of band-tail states and temperature-dependent mobility and threshold voltage. The proposed model is validated against experimental data from the fabricated OSFETs with multiple channel lengths and published measurements of 2DFETs, CNFETs, and cryogenic MOSFETs. Excellent agreement is demonstrated across diverse device architectures, operating conditions, and material systems.

physics.app-ph

Multiplexing approaches to thermoradiative signatureless communications

Using mid-infrared emission from semiconductor devices for covert communications remains a relatively unexplored and yet promising opportunity. The phenomenon of negative luminescence allows for a method of signatureless covert communications where the net infrared emission of an emitting optoelectronic device is balanced to be identical to the ambient thermal background. In this work we provide a practical demonstration of covert data transfer over a thermoradiative channel with data rates up to 100 kbps. In addition, we demonstrate several additional multiplexing techniques that make the proposed thermoradiative communications method more secure against interception by achieving zero instantaneous optical emission, while remaining detectable if a sufficiently spatially or spectrally discerning observation is utilised. Finally, we discuss various application scenarios in which the proposed methods can be used to achieve secure signatureless communications.

physics.app-ph