Search arXivSearch

arXiv · 2404.11785

Intelligent mechanical metamaterials towards learning static and dynamic behaviors

Abstract

The exploration of intelligent machines has recently spurred the development of physical neural networks, a class of intelligent metamaterials capable of learning, whether in silico or in situ, from observed data. In this study, we introduce a back-propagation framework for lattice-based mechanical neural networks (MNNs) to achieve prescribed static and dynamic performance. This approach leverages the steady states of nodes for back-propagation, efficiently updating the learning degrees of freedom without prior knowledge of input loading. One-dimensional MNNs, trained with back-propagation in silico, can exhibit the desired behaviors on demand function as intelligent mechanical machines. The framework is then employed for the precise morphing control of the two-dimensional MNNs subjected to different static loads. Moreover, the intelligent MNNs are trained to execute classical machine learning tasks such as regression to tackle various deformation control tasks. Finally, the disordered MNNs are constructed and trained to demonstrate pre-programmed wave bandgap control ability, illustrating the versatility of the proposed approach as a platform for physical learning. Our approach presents an efficient pathway for the design of intelligent mechanical metamaterials for a wide range of static and dynamic target functionalities, positioning them as powerful engines for physical learning.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Jiaji Chen, Xuanbo Miao, Hongbin Ma, Jonathan B. Hopkins, Guoliang Huang. 2024-04-17. Intelligent mechanical metamaterials towards learning static and dynamic behaviors. https://doi.org/10.1016/j.matdes.2024.113093

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring vacancy-type defect density in monolayer semiconductors

Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to control these properties. However, experimental quantification of the density of defects, whether deliberately introduced or inherent, is very difficult in these atomically thin materials. Here we show that helium atom micro-diffraction can be used to measure the defect density in ~15x20um monolayer MoS2, a prototypical 2D semiconductor, quickly and easily compared to standard methods. We present a simple analytic model, the lattice gas equation, that captures the relationship between atomic Bragg diffraction intensity and defect density. The model, combined with ab initio scattering calculations, shows that our technique can immediately be applied to a wide range of 2D materials, independent of sample chemistry or structure. Additionally, wafer-scale characterization is immediately possible.

physics.app-ph

Compact Modeling of Oxide-Semiconductor, 2D Material, Carbon Nanotube, and Cryogenic Transistors with Experiment Verification

This paper presents a unified compact model for emerging transistor technologies, including oxide-semiconductor field-effect transistors (OSFETs), 2D material FETs (2DFETs), carbon nanotube FETs (CNFETs), and cryogenic MOSFETs. A unified charge-density formulation is developed to account for quantum confinement, trap charges, and band-tail states in channel charge calculations. A physics-based transport model is introduced to seamlessly capture carrier transport from the long-channel diffusive regime to the short-channel ballistic limit. Scaling models are incorporated to accurately describe 2D electrostatic effects. Cryogenic operation is modeled through the inclusion of band-tail states and temperature-dependent mobility and threshold voltage. The proposed model is validated against experimental data from the fabricated OSFETs with multiple channel lengths and published measurements of 2DFETs, CNFETs, and cryogenic MOSFETs. Excellent agreement is demonstrated across diverse device architectures, operating conditions, and material systems.

physics.app-ph

Multiplexing approaches to thermoradiative signatureless communications

Using mid-infrared emission from semiconductor devices for covert communications remains a relatively unexplored and yet promising opportunity. The phenomenon of negative luminescence allows for a method of signatureless covert communications where the net infrared emission of an emitting optoelectronic device is balanced to be identical to the ambient thermal background. In this work we provide a practical demonstration of covert data transfer over a thermoradiative channel with data rates up to 100 kbps. In addition, we demonstrate several additional multiplexing techniques that make the proposed thermoradiative communications method more secure against interception by achieving zero instantaneous optical emission, while remaining detectable if a sufficiently spatially or spectrally discerning observation is utilised. Finally, we discuss various application scenarios in which the proposed methods can be used to achieve secure signatureless communications.

physics.app-ph