Shallow core levels, or how to determine the doping and $T_c$ of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ and Bi$_{2}$Sr$_2$CuO$_{6+δ}$ without cooling

Abstract

Determining the doping level in high-temperature cuprate superconductors is crucial for understanding the origin of superconductivity in these materials and for unlocking their full potential. However, accurately determining the doping level remains a significant challenge due to a complex interplay of factors and limitations in various measurement techniques. In particular, in Bi$_{2}$Sr$_2$CuO$_{6+δ}$ and Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$, where the mobile carriers are introduced by non-stoichiometric oxygen $δ$, the determination has been extremely problematic. Here, we study the doping dependence of the electronic structure of these materials in angle-resolved photoemission and find that both the doping level, $p$, and the superconducting transition temeprature, $T_c$ can be precisely determined from the binding energy of the Bi $5d$ core-levels. The measurements can be performed at room temperature, enabling the determination of $p$ and $T_c$ without cooling the samples. This should be very helpful for further studies of these materials.