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arXiv · 2410.09021

Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature

Timo Steidl·Pierre Kuna·Erik Hesselmeier-Hüttmann·Di Liu·Rainer Stöhr·Wolfgang Knolle·Misagh Ghezellou·Jawad Ul-Hassan·Maximilian Schober·Michel Bockstedte·Adam Gali·Vadim Vorobyov·Jörg Wrachtrup
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Abstract

Nanoelectrical and photonic integration of quantum optical components is crucial for scalable solid-state quantum technologies. Silicon carbide stands out as a material with mature quantum defects and a wide variety of applications in semiconductor industry. Here, we study the behaviour of single silicon vacancy (V2) colour centres in a metal-semiconductor (Au/Ti/4H-SiC) epitaxial wafer device, operating in a Schottky diode configuration. We explore the depletion of free carriers in the vicinity of the defect, as well as electrical tuning of the defect optical transition lines. By detecting single charge traps, we investigate their impact on V2 optical line width. Additionally, we investigate the charge-photon-dynamics of the V2 centre and find its dominating photon-ionisation processes characteristic rate and wavelength dependence. Finally, we probe the spin coherence properties of the V2 system in the junction and demonstrate several key protocols for quantum network applications. Our work shows the first demonstration of low temperature integration of a Schottky device with optical microstructures for quantum applications and paves the way towards fundamentally scalable and reproducible optical spin defect centres in solids.

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Timo Steidl, Pierre Kuna, Erik Hesselmeier-Hüttmann, Di Liu, Rainer Stöhr, Wolfgang Knolle, Misagh Ghezellou, Jawad Ul-Hassan, Maximilian Schober, Michel Bockstedte, Adam Gali, Vadim Vorobyov, Jörg Wrachtrup. 2024-10-11. Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature. https://arxiv.org/abs/2410.09021

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