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arXiv · 2501.15523

Gate Tunable Josephson Diode Effect in Josephson Junctions made from InAs Nanosheets

Shili Yan·Yi Luo·Haitian Su·Han Gao·Xingjun Wu·Dong Pan·Jianhua Zhao·Ji-Yin Wang·Hongqi Xu
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Abstract

We report the observation of Josephson diode effect (JDE) in hybrid devices made from semiconductor InAs nanosheets and superconductor Al contacts. By applying an in-plane magnetic field ($B_{\mathrm{xy}}$), we detect non-reciprocal superconducting switching current as well as non-reciprocal superconducting retrapping current. The strength of the JDE depends on the angle between the in-plane magnetic field and the bias current ($I_{\mathrm{b}}$), reaching its maximum when $B_{\mathrm{xy}} \perp I_{\mathrm{b}}$ and dropping to nearly zero when $B_{\mathrm{xy}}\parallel I_{\mathrm{b}}$. Additionally, the diode efficiency is tunable via an electrostatic gate with a complete suppression at certain gate voltages. Our findings indicate that the observed JDE in InAs nanosheet-based Josephson junctions most likely arises from the Rashba spin-orbit interaction (SOI) in the nanosheets. Such gate-tunable JDE in Josephson junctions made from semiconductor materials with SOI is useful not only for constructing advanced superconducting electronics but also for detecting novel superconducting states.

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Shili Yan, Yi Luo, Haitian Su, Han Gao, Xingjun Wu, Dong Pan, Jianhua Zhao, Ji-Yin Wang, Hongqi Xu. 2025-01-26. Gate Tunable Josephson Diode Effect in Josephson Junctions made from InAs Nanosheets. https://arxiv.org/abs/2501.15523

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