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arXiv · 2501.16887

The ATLASPix3.1 CMOS Pixel Sensor Testbeam Performance and Serial Powering Characterisation

F. Ustuner·R. Zanzottera·A. Andreazza·R. Dong·H. Fox·Y. Gao·P. Gheewalla·B. Masic·L. Meng·I. Peric·F. Sabatini
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Abstract

High-voltage CMOS (HV-CMOS) pixel technology is being considered for future Higgs factory experiments. The ATLASPix3.1 chip, with a pitch of 50$\mu m$ x 150$\mu m$, fabricated using TSI 180nm HV-CMOS technology, is a full reticle-size monolithic HV-CMOS sensor with shunt-low dropout (LDO) regulators that allow serial powering for multiple sensors. A beam test was conducted at DESY using 3-6 GeV electron beams, with chips operated in triggerless readout mode with zero suppression, demonstrating multi-chip capability. This was further evaluated with hadron beams, both with and without the built-in power regulators. This study presents the electrical characterisations of the shunt-LDO regulators for serial powering and test beam results of ATLASPix3.1 sensors.

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F. Ustuner, R. Zanzottera, A. Andreazza, R. Dong, H. Fox, Y. Gao, P. Gheewalla, B. Masic, L. Meng, I. Peric, F. Sabatini. 2025-01-28. The ATLASPix3.1 CMOS Pixel Sensor Testbeam Performance and Serial Powering Characterisation. https://arxiv.org/abs/2501.16887

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