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arXiv · 2503.07838

Design and characterization of a fast output amplifier for Silicon Photomultipliers

Felipe Soriano·Lucas Finazzi·Gabriel Sanca·Federico Golmar
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Abstract

A voltage amplifier, based on the BFU500XRR NPN transistor in a common-emitter configuration, was developed for the readout of the fast output of an ONSEMI MicroFC-10035 Silicon Photomultiplier (SiPM). This amplifier was tested and characterized under dark and illuminated SiPM conditions. For the design presented in this work, a Gain of $(20.0 \pm 0.7)$ dB and a rise time of $(768 \pm 10)$ ps were achieved for one amplifier stage and a Gain of $(38.3 \pm 0.7)$ dB and rise time of $(1155 \pm 16)$ ps was achieved for two cascaded stages. In addition, the linearity of both topologies was verified and the measured Signal-to-Noise Ratio (SNR) was ($21.9 \pm 0.4$) dB and ($18.8 \pm 0.5$) dB for the one-stage and two-stage amplifiers, respectively. This design provides a cheap and scalable (weight and size) alternative to other fast output amplifiers that are used when operating SiPMs fast outputs. These characteristics make this design ideal for space applications.

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Felipe Soriano, Lucas Finazzi, Gabriel Sanca, Federico Golmar. 2025-03-10. Design and characterization of a fast output amplifier for Silicon Photomultipliers. https://arxiv.org/abs/2503.07838

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