Analytical Modeling and TCAD simulation of n-Fz Double Sided Si Microstrip Detector Equipped with WGR irradiated by Protons for the R3B Experiment

Abstract

Radiation hard n-Fz Double Sided Silicon microstrip Detectors are used at the Silicon Tracker for the detection of two-dimensional position and energy measurement of the incident protons in the R3B experiment at FAIR, Darmstadt, Germany. For the development of the detectors for the R3B Silicon Tracker, the macroscopic analysis is conducted on the test structure of n-Fz Double Sided Silicon microstrip Detector, which was fabricated by BEL, Bengaluru, India, and the SRH results on the non-irradiated test structure detectors are compared with the experimental data. The SRH and CCE modeling is used to extrapolate the results up to the proton fluence of 8E14 neq cm-2 for the proton irradiated detectors. This experience is used in the designing of the detectors for the phase 1 upgrade of the experiment and the proposed Double Sided Silicon microstrip Detector equipped with Wider Guard Ring design is simulated by 2-D Silvaco ATLAS device TCAD. To evaluate the breakdown performance of the proton irradiated detectors, the inner and the outer sides (towards the cut edge of the detector) of the detector are simulated to extract the electric field distribution up to an applied bias of -1000 V. In order to observe the effect of the interstrip capacitances on the noise of the readout system of the proton irradiated (back side) detectors, SPICE simulation is performed. The results reveal that a new radiation hard 200 μm ac coupled Double Sided Silicon microstrip Detector (with an intra guard ring) having an outer edge wider guard ring (dead space of 450 μm) structure has been proposed for the phase 1 upgrade of the R3B Silicon Tracker.