Search arXivSearch

arXiv · 2503.20416

Effects of the thin-film thickness on superconducting NbTi microwave resonators for on-chip cryogenic thermometry

Abstract

Superconducting microwave resonators have recently gained a primary importance in the development of cryogenic applications, such as circuit quantum electrodynamics, electron spin resonance spectroscopy and particles detection for high-energy physics and astrophysics. In this work, we investigate the influence of the film thickness on the temperature response of microfabricated Nb50Ti50 superconducting resonators. S-shaped split ring resonators (S-SRRs), 20 nm to 150 nm thick, are designed to be electromagnetically coupled with standard Cu coplanar waveguides (CPWs) and their microwave properties are characterized at temperatures below 10 K. The combined contributions of the kinetic inductance LK(T) increase and the decreasing loaded quality factor QL, for thinner films, induce an optimum condition on the temperature sensitivity and resolution of the resonators. A noise equivalent temperature (NET) as low as 0.5 uK/Hz^(1/2), at 1 Hz, is reported for 100 nm thick resonators at 4.2 K. We also asses the possibility of implementing a multiplexed frequency readout, allowing for the simultaneous temperature tracking of several sensors along a single CPW. Such results demonstrate the possibility to perform a distributed cryogenic temperature monitoring, with a sub-mK resolution. Thus, the application of superconducting S-SRRs, eventually benefiting from an even higher LK(T), for a further miniaturization, as well as a back-end integration directly on-chip, can be envisioned for the accurate monitoring of localized temperature of devices operating in cryogenic conditions.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

André Chatel, Roberto Russo, Luca Mazzone, Quentin Boinay, Reza Farsi, Jürgen Brugger, Giovanni Boero, Hernan Furci. 2025-07-24. Effects of the thin-film thickness on superconducting NbTi microwave resonators for on-chip cryogenic thermometry. https://doi.org/10.1088/1361-6668%2Fae26d8

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring vacancy-type defect density in monolayer semiconductors

Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to control these properties. However, experimental quantification of the density of defects, whether deliberately introduced or inherent, is very difficult in these atomically thin materials. Here we show that helium atom micro-diffraction can be used to measure the defect density in ~15x20um monolayer MoS2, a prototypical 2D semiconductor, quickly and easily compared to standard methods. We present a simple analytic model, the lattice gas equation, that captures the relationship between atomic Bragg diffraction intensity and defect density. The model, combined with ab initio scattering calculations, shows that our technique can immediately be applied to a wide range of 2D materials, independent of sample chemistry or structure. Additionally, wafer-scale characterization is immediately possible.

physics.app-ph

Compact Modeling of Oxide-Semiconductor, 2D Material, Carbon Nanotube, and Cryogenic Transistors with Experiment Verification

This paper presents a unified compact model for emerging transistor technologies, including oxide-semiconductor field-effect transistors (OSFETs), 2D material FETs (2DFETs), carbon nanotube FETs (CNFETs), and cryogenic MOSFETs. A unified charge-density formulation is developed to account for quantum confinement, trap charges, and band-tail states in channel charge calculations. A physics-based transport model is introduced to seamlessly capture carrier transport from the long-channel diffusive regime to the short-channel ballistic limit. Scaling models are incorporated to accurately describe 2D electrostatic effects. Cryogenic operation is modeled through the inclusion of band-tail states and temperature-dependent mobility and threshold voltage. The proposed model is validated against experimental data from the fabricated OSFETs with multiple channel lengths and published measurements of 2DFETs, CNFETs, and cryogenic MOSFETs. Excellent agreement is demonstrated across diverse device architectures, operating conditions, and material systems.

physics.app-ph

Multiplexing approaches to thermoradiative signatureless communications

Using mid-infrared emission from semiconductor devices for covert communications remains a relatively unexplored and yet promising opportunity. The phenomenon of negative luminescence allows for a method of signatureless covert communications where the net infrared emission of an emitting optoelectronic device is balanced to be identical to the ambient thermal background. In this work we provide a practical demonstration of covert data transfer over a thermoradiative channel with data rates up to 100 kbps. In addition, we demonstrate several additional multiplexing techniques that make the proposed thermoradiative communications method more secure against interception by achieving zero instantaneous optical emission, while remaining detectable if a sufficiently spatially or spectrally discerning observation is utilised. Finally, we discuss various application scenarios in which the proposed methods can be used to achieve secure signatureless communications.

physics.app-ph