Phonon-Coupled Hole-Spin Qubits in High-Purity Germanium: Design and Modeling of a Scalable Architecture

Abstract

We present a design and modeling of a scalable quantum processor architecture utilizing hole-spin qubits defined in gate-controlled germanium (Ge) quantum dots, where coherent spin-phonon coupling is predicted to facilitate qubit manipulation and long-range interactions. The architecture exploits the strong, electrically tunable spin-orbit interactions intrinsic to hole states in Ge, integrated with high-quality phononic crystal cavities (PnCCs) to enable fully electrical qubit control and phonon-mediated coupling. Employing a streamlined simulation framework built upon multiband \(\mathbf{k}\cdot\mathbf{p}\) modeling and finite-element methods, we quantify key performance metrics, including electrically tunable \( g \)-factors ranging from \(1.3\) to \(2.0\), spin-phonon coupling strengths up to \(6.3\,\mathrm{MHz}\), phononic cavity quality factors exceeding \(10^4\), and phonon-mediated spin relaxation times (\(T_1\)) reaching milliseconds. The proposed architecture concurrently achieves extended spin coherence and rapid gate operations through strategic electric field modulation and engineered phononic bandgap environments. Furthermore, isotopically enriched high-purity Ge crystals grown in-house at the University of South Dakota, significantly enhance device coherence by minimizing disorder and hyperfine interactions. This integrated approach, merging advanced materials engineering, precise spin-orbit coupling, and phononic cavity design, establishes a promising CMOS-compatible pathway toward scalable, high-fidelity quantum computing.