Search arXivSearch

arXiv · 2504.17429

Wide-angle Scanning Heterogeneous Element-Based Phased Array Using Novel Scanning Envelope Synthesis Method

Abstract

Two novel methods, including the scanning envelope synthesis (SES) method and the active reflection self-cancellation (ARC) method, are proposed to design wide-angle scanning heterogeneous element phased arrays. Heterogeneous strategy is efficient to extend scanning range but quantitatively characterization of the effect is critically needed to guide design for achieving desired performance. The proposed SES method derives theoretically the relationship between scanning range and the 3dB-beamwidth of the pattern envelope of one phased array, which is linear superposition of active radiation pattern (AEP) magnitude of each element. Therefore, the contribution of each kind of heterogeneity can be quantitatively analyzed for further enhancing the scanning range. As we see, a high active reflection coefficient of the phased array can directly reduce the realized gain. In this way, one ARC method is proposed to reduce the active reflection coefficient by counteracting the reflection component of active reflection coefficient with its transmission component, thereby keeping the realized gain efficiently even when the array scans at large angels. For verification, one 24.5-29.5GHz 4x4 phased array scanning in E-plane is designed and fabricated. Benefiting from the proposed SES method, the scanning range of the prototype is extended up to $\pm74°$, around 10° improvement over one traditional heterogeneous array. Meanwhile, the active reflection coefficient is reduced from -4dB to lower than -7.5dB by applying the ARC method.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Yongzheng Li, Wanchen Yang, Quan Xue, Wenquan Che. 2025-04-24. Wide-angle Scanning Heterogeneous Element-Based Phased Array Using Novel Scanning Envelope Synthesis Method. https://arxiv.org/abs/2504.17429

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring vacancy-type defect density in monolayer semiconductors

Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to control these properties. However, experimental quantification of the density of defects, whether deliberately introduced or inherent, is very difficult in these atomically thin materials. Here we show that helium atom micro-diffraction can be used to measure the defect density in ~15x20um monolayer MoS2, a prototypical 2D semiconductor, quickly and easily compared to standard methods. We present a simple analytic model, the lattice gas equation, that captures the relationship between atomic Bragg diffraction intensity and defect density. The model, combined with ab initio scattering calculations, shows that our technique can immediately be applied to a wide range of 2D materials, independent of sample chemistry or structure. Additionally, wafer-scale characterization is immediately possible.

physics.app-ph

Compact Modeling of Oxide-Semiconductor, 2D Material, Carbon Nanotube, and Cryogenic Transistors with Experiment Verification

This paper presents a unified compact model for emerging transistor technologies, including oxide-semiconductor field-effect transistors (OSFETs), 2D material FETs (2DFETs), carbon nanotube FETs (CNFETs), and cryogenic MOSFETs. A unified charge-density formulation is developed to account for quantum confinement, trap charges, and band-tail states in channel charge calculations. A physics-based transport model is introduced to seamlessly capture carrier transport from the long-channel diffusive regime to the short-channel ballistic limit. Scaling models are incorporated to accurately describe 2D electrostatic effects. Cryogenic operation is modeled through the inclusion of band-tail states and temperature-dependent mobility and threshold voltage. The proposed model is validated against experimental data from the fabricated OSFETs with multiple channel lengths and published measurements of 2DFETs, CNFETs, and cryogenic MOSFETs. Excellent agreement is demonstrated across diverse device architectures, operating conditions, and material systems.

physics.app-ph

Multiplexing approaches to thermoradiative signatureless communications

Using mid-infrared emission from semiconductor devices for covert communications remains a relatively unexplored and yet promising opportunity. The phenomenon of negative luminescence allows for a method of signatureless covert communications where the net infrared emission of an emitting optoelectronic device is balanced to be identical to the ambient thermal background. In this work we provide a practical demonstration of covert data transfer over a thermoradiative channel with data rates up to 100 kbps. In addition, we demonstrate several additional multiplexing techniques that make the proposed thermoradiative communications method more secure against interception by achieving zero instantaneous optical emission, while remaining detectable if a sufficiently spatially or spectrally discerning observation is utilised. Finally, we discuss various application scenarios in which the proposed methods can be used to achieve secure signatureless communications.

physics.app-ph