Observation of Topological Hall Effect in Synthetic Antiferromagnetic Skyrmion System

Xinbao Geng; Guanqi Li; Zhongxiang Zhang; Wenjing Hu; Wenjing Zhong; Xiaoming Xiong; Yongbing Xu; Zhendong Chen; Junlin Wang; Xiangyu Zheng; Jing Wu

arXiv · 2505.15012

Observation of Topological Hall Effect in Synthetic Antiferromagnetic Skyrmion System

Xinbao Geng·Guanqi Li·Zhongxiang Zhang·Wenjing Hu·Wenjing Zhong·Xiaoming Xiong·Yongbing Xu·Zhendong Chen·Junlin Wang·Xiangyu Zheng·Jing Wu

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Abstract

Synthetic antiferromagnetic (SAF) skyrmions have emerged as promising candidates for next-generation high-speed and highly integrated spintronic devices, owing to their exceptional properties such as high driving velocity, nanoscale dimensions, and the absence of the skyrmion Hall effect. In this work, we report the observation of the topological Hall effect in both compensated and non-compensated synthetic antiferromagnetic skyrmion systems based on [Pt/Co/Ru]2 bilayers. The antiferromagnetic skyrmions are demonstrated to be robust in these synthetic antiferromagnets under zero-field. Our first principal calculations and micromagnetic simulations demonstrate that the formation of the antiferromagnetic skyrmions are due to nonuniformity of RKKY coupling associated with the proximity effect induced magnetic moments in the Pt and Ru layers. The skyrmions in the Pt and Ru layers adjacent to the Co layers lead to the observed topological Hall effect. This work not only provides insight into the effect of the magnetic proximity effect and RKKY coupling to the SAF skyrmions, but also an effective detection method for the SAF skyrmion systems, thereby laying a foundation for the practical application of antiferromagnetic skyrmions in spintronic devices.

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Xinbao Geng, Guanqi Li, Zhongxiang Zhang, Wenjing Hu, Wenjing Zhong, Xiaoming Xiong, Yongbing Xu, Zhendong Chen, Junlin Wang, Xiangyu Zheng, Jing Wu. 2025-11-21. Observation of Topological Hall Effect in Synthetic Antiferromagnetic Skyrmion System. https://arxiv.org/abs/2505.15012

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