Search arXiv⌕ Search
Home/Archive/arXiv

arXiv · 2506.08556

Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance

Ramisa Fariha·Saikat Das·Labiba Tanjil Nida·Abeer Khan·Md Tashfiq Bin Kashem
View original source ↗Read source document ↗Export metadata ↓

Abstract

Dual-material double-gate tunnel field effect transistor (DMDG TFET) is a promising candidate for low-power, high-speed electronics due to enhanced electrostatic control and superior switching characteristics. Integrating a pocket region between the source and channel-doped oppositely to the source-further improves tunneling efficiency by modulating the electric field at the tunneling junction. This combined architecture, termed the DMDG source-pocket TFET (DMDG-SP TFET), achieves higher ON current and reduced subthreshold swing compared to conventional TFETs. Previous DMDG-SP TFET designs primarily use heterogeneous gate dielectrics, composed of two stacked insulators to enhance gate control and tunneling modulation. However, such hetero gate dielectrics increase fabrication complexity and may degrade device reliability due to material incompatibility. This work proposes a silicon-based DMDG-SP TFET employing a homogenous gate dielectric, investigated through Silvaco Atlas-based 2-D TCAD simulations, aiming to simplify fabrication without compromising performance. Presence of the pocket results in 6.7x higher ON current and 1.7x lower subthreshold swing compared to pocket-less devices. Dual-material gates boost ON current by 45% and improve the ON/OFF current ratio by 59% compared to single-material gates in pocket-based devices. Detailed simulations analyze effects of gate metal work functions and lengths, gate dielectric constant, and doping densities and lengths of all regions. The optimized device achieves an ON current of 3.16*10^-4 A/um, OFF current of 1.54*10^-17 A/um, ON/OFF ratio of 2.05*10^13, and subthreshold slope of 6.29 mV/decade. These findings offer critical insights for designing manufacturable, high-performance homojunction silicon-based DMDG-SP TFETs with homogeneous gate dielectrics for next-generation low-power integrated circuits.

Explore related subjects

physics.app-ph

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Ramisa Fariha, Saikat Das, Labiba Tanjil Nida, Abeer Khan, Md Tashfiq Bin Kashem. 2025-06-10. Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance. https://arxiv.org/abs/2506.08556

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Janus Dipoles: Fundamentals, Realizations, and Emerging Applications

The Janus dipole - featuring orthogonally oriented electric and magnetic dipoles with a 90-degree phase difference - has emerged as a powerful paradigm for wave manipulation. Unlike traditional Huygens dipoles used for directional control, this unique configuration exhibits strongly asymmetric, face-selective near-field behavior while maintaining a quasi-isotropic far-field radiation pattern. These remarkable properties make the Janus dipole an essential platform for directional wave shaping, with wide-ranging applications in on-chip photonics, quantum interactions, and wireless power transfer. This review systematically traces the rapid development of the Janus dipole from its foundational theoretical inception to its diverse implementation platforms across optical, microwave, and acoustic frequencies. In this paper, we explore the governing principles, classify realization strategies into passive Janus dipoles, active Janus dipoles, and advanced near-field coupling control, and highlight emerging frontiers. By bridging foundational electrodynamics with advanced device engineering, this paper serves as an essential reference and roadmap for researchers designing next-generation, highly integrated, and compact wave-manipulation systems.

physics.app-ph↗
arXiv2026

Evaluation of effective wave velocities in polycrystalline materials using the ultrasonic reflection matrix

In-depth characterization of heterogeneous materials has long been a challenge in non-destructive testing. Here, a method is proposed to determine the elastic constants of metallic polycrystalline materials using back-scattered ultrasound. The waves scattered by the microstructure are analyzed to image the effective bulk velocities. To this end, a reflection matrix is acquired with an array of transducers. The projection of this matrix onto a focused basis is used to estimate an average point spread function. Optimizing this function with respect to the propagation model leads to an estimation of the longitudinal velocity. Additional treatments are developed to adapt the method to map the shear wave velocity. The local Poisson's ratio is then deduced from the ratio between those two velocities. Young's modulus and shear modulus can also be obtained assuming known densities. This matrix approach is experimentally validated on different polycrystalline materials. A sample displaying heterogeneous mechanical properties is then simulated to assess the accuracy and the resolution of the method. Its strengths and limitations are discussed, demonstrating its potential for quantitative non-destructive material characterization.

physics.app-ph↗
arXiv2026

Pendellösung length-scale neutron and X-ray interferometry

Neutron and X-ray perfect-crystal interferometers (PCIs) are powerful platforms for studies of fundamental physics and phase-contrast imaging. Further enhancing several PCI capabilities requires reducing crystal blade thickness to the micron scale, which minimizes dynamical-diffraction image blur, permits operation in the pendellösung regime where blade thickness controls beam splitting, and reduces absorption for simultaneous neutron and X-ray operation. However, fabricating multiple crystal blades with identical micrometer-scale thicknesses over centimeter-scale areas remains a major challenge. Here, using a non-etching sub-micron fabrication technique, we demonstrate silicon triple-Laue interferometers with equal-blade-thicknesses of 110 $μ$m and 350 $μ$m, operated with both neutrons and X-rays. These devices are the thinnest PCIs realized to date, enabling a factor-of-six reduction in dynamical-diffraction beam spreading for improved phase-contrast imaging, while reaching the single pendellösung length regime in which crystal thickness provides an experimentally accessible control parameter for engineered quantum-optical beam splitting of plane-wave inputs. These results motivate multi-blade PCI designs utilizing identical half-pendellösung crystal lamellae that are proposed for neutron spin--orbit and electric dipole moment measurements.

physics.app-ph↗