Deconfined Quantum Critical Point in Quantum Hall Bilayers

Guangyu Yu; Tao Xiang; Zheng Zhu

Home/Archive/arXiv

arXiv · 2509.03079

Deconfined Quantum Critical Point in Quantum Hall Bilayers

Guangyu Yu·Tao Xiang·Zheng Zhu

View original source ↗Read source document ↗Export metadata ↓

Abstract

Deconfined quantum critical points (DQCPs) represent an unconventional class of quantum criticality beyond the Landau-Ginzburg-Wilson-Fisher paradigm. Nevertheless, both their theoretical identification and experimental realization remain challenging. Here we report compelling evidence of a DQCP in quantum Hall bilayers with half-filled $n=2$ Landau levels in each layer, based on large-scale variational uniform matrix product state (VUMPS) simulations and exact diagonalization (ED). By systematically analyzing the ground-state fidelity, low-lying energy spectra, exciton superfluid and stripe order parameters, and ground-state energy derivatives, we identify a direct and continuous quantum phase transition between two distinct symmetry-breaking phases by tuning the layer separation: an exciton superfluid phase with spontaneous $U(1)$ symmetry breaking at small separation, and a unidirectional charge density wave with broken translational symmetry at large separation. Our results highlight quantum Hall bilayers as an ideal platform for realizing and experimentally probing DQCPs under precisely tunable interactions.

Explore related subjects

cond-mat.mes-hall cond-mat.str-el

Keep this discovery

Explore connections, maps & timelines

BibTeX RIS

Guangyu Yu, Tao Xiang, Zheng Zhu. 2025-09-03. Deconfined Quantum Critical Point in Quantum Hall Bilayers. https://arxiv.org/abs/2509.03079

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Benzo-bis(imidazole) self-assembled monolayers molecular junctions in meta or para conformation: effects of protonation on the electrical and thermal conductances

We report the thermal conductances of molecular junctions made of self-assembled monolayers of benzo-bis(imidazole) molecules, without side groups or functionalized with two phenylamine side groups. In the two cases, when the molecules are connected to the electrodes by thiol anchoring groups in the meta-position, the thermal conductance is decreased compared to the same molecules connected in the para-position (ca. 16-29 nW/K and ca. 37-40 nW/K, respectively) in agreement with the theoretically predicted phonon interference effect in molecular junctions. Upon protonation, the thermal conductances of the meta-connected molecular junction increase by about 50% (reversible behavior upon deprotonation). The fact that only the thermal conductance of the meta-connected molecular junction is sensitive to the protonation/deprotonation is tentatively related to modifications of the structural organization of the molecules in the monolayer, which modifies the thermal conductance at the molecule/electrode interfaces. The electrical conductance is lower for the meta-connected molecule than for the para-connected one, due to destructive quantum interferences, as expected and reported for other molecular junctions. The conductance further decreases (reversibly) upon protonation. The energy position of the molecular orbital involved in the electron transport is not modified by the protonation and the decrease in current is related to changes in the molecule organization in the monolayer, which modulate the electronic coupling energy at the molecule/electrode interfaces.

cond-mat.mes-hall↗

arXiv2026

Scaling behavior of eigenspectrum for entanglement from correlation matrices

We study the scaling behavior of the eigenvalues of correlation matrices, which characterize the entanglement of a subsystem with its complement part of a total pure state. A most distinguishing feature of entanglement entropy is its logarithmic dependence on the subsystem size for the groundstate of one-dimensional critical systems. Despite its robust universal character and relevance to a wide range of topics, a thorough understanding of this result requires sophisticated mathematical physics techniques or conformal field theory. The aim of our work is to shed light on this from the underlying eigenvalue distribution perspective. The central object is the correlation matrix, which takes the form of Toeplitz or block-Toeplitz matrix. We develop a circulant matrix approximation in the large matrix dimension limit, thus allowing for the individual eigenvalues behavior to be analysed analytically. We find that for both free lattice fermions and transverse field Ising chain, eigenvalues in the bulk of the eigenspectrum scales as $1/L_A$ with the subsystem size. Together with the extensivity of the entropy function, it explains the robust $\log_2 L_A$ scaling of entanglement at criticality. Perturbing from the entanglement-free limit of the Ising chain, we find a smooth crossover behavior to `non-critical' scaling that is characterized by a very slow logarithmic dependence rendering it seemingly a constant entanglement value expected of non-critical systems.

cond-mat.mes-hall↗

arXiv2026

Cryogenic Voltage Control of Magnetism in Silicon-Integrated \newline SrTiO$_3$/Fe Heterostructures

Cryogenic electronics forms a rapidly emerging research domain for high-performance and power-efficient computing applications. Incorporating nanomagnetic components in cryogenic circuitry adds highly valuable functionality, facilitating downscaling, reducing energy consumption and introducing time-reversal symmetry breaking. Furthermore, low-temperature environments enhance magnetic stability and switching efficiency at nanoscale dimensions, reinforcing the potential of cryogenic nanomagnets. To fully leverage these opportunities, magnetic control schemes require alternative options to current-based writing, which is the main bottleneck regarding power consumption and downscaling. In this regard, voltage-based gating of the magnetic state could drastically enhance operational efficiency and integration density. In this work, we investigate cryogenic Voltage Control of Magnetism (VCM) in epitaxial SrTiO$_3$/Fe thin film heterostructures on a CMOS compatible Si substrate. We demonstrate and quantify voltage-controlled modifications of the magnetic domain structure, consistent with electric field-controlled magnetic anisotropy at the Fe/SrTiO$_3$ interface. These findings provide a viable material system for the development of next-generation magnetic domain-based devices for classical and quantum computing.

cond-mat.mes-hall↗