Search arXivSearch

arXiv · 2509.04223

Making neural networks understand internal heat transfer using Fourier-transformed thermal diffusion wave fields

Abstract

Heat propagation is governed by phonon interactions and mathematically described by partial differential equations (PDEs), which link thermal transport to the intrinsic properties of materials. Conventional experimental techniques infer thermal responses based on surface emissions, limiting their ability to fully resolve subsurface structures and internal heat distribution. Additionally, existing thermal tomographic techniques can only shoot one frame from each layer. Physics-informed neural networks (PINNs) have recently emerged as powerful tools for solving inverse problems in heat transfer by integrating observational data with physical constraints. However, standard PINNs are primarily focused on fitting the given external temperature data, without explicit knowledge of the unknown internal temperature distribution. In this study, we introduce a Helmholtz-informed neural network (HINN) to predict internal temperature distributions without requiring internal measurements. The time-domain heat diffusion equation was converted to the frequency-domain and becomes the pseudo-Helmholtz equation. HINN embeds this pseudo-Helmholtz equation into the learning framework, leveraging both real and imaginary components of the thermal field. Finally, an inverse Fourier transform brings real-part and imagery-part back to the time-domain and can be used to map 3D thermal fields with interior defects. Furthermore, a truncated operation was conducted to improve computational efficiency, and the principle of conjugate symmetry was employed for repairing the discarded data. This approach significantly enhances predictive accuracy and computational efficiency. Our results demonstrate that HINN outperforms state-of-the-art PINNs and inverse heat solvers, offering a novel solution for non-invasive thermography in applications spanning materials science, biomedical diagnostics, and nondestructive evaluation.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Pengfei Zhu, Hai Zhang, Clemente Ibarra-Castanedo, Xavier Maldague, Andreas Mandelis. 2025-09-04. Making neural networks understand internal heat transfer using Fourier-transformed thermal diffusion wave fields. https://arxiv.org/abs/2509.04223

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring vacancy-type defect density in monolayer semiconductors

Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to control these properties. However, experimental quantification of the density of defects, whether deliberately introduced or inherent, is very difficult in these atomically thin materials. Here we show that helium atom micro-diffraction can be used to measure the defect density in ~15x20um monolayer MoS2, a prototypical 2D semiconductor, quickly and easily compared to standard methods. We present a simple analytic model, the lattice gas equation, that captures the relationship between atomic Bragg diffraction intensity and defect density. The model, combined with ab initio scattering calculations, shows that our technique can immediately be applied to a wide range of 2D materials, independent of sample chemistry or structure. Additionally, wafer-scale characterization is immediately possible.

physics.app-ph

Compact Modeling of Oxide-Semiconductor, 2D Material, Carbon Nanotube, and Cryogenic Transistors with Experiment Verification

This paper presents a unified compact model for emerging transistor technologies, including oxide-semiconductor field-effect transistors (OSFETs), 2D material FETs (2DFETs), carbon nanotube FETs (CNFETs), and cryogenic MOSFETs. A unified charge-density formulation is developed to account for quantum confinement, trap charges, and band-tail states in channel charge calculations. A physics-based transport model is introduced to seamlessly capture carrier transport from the long-channel diffusive regime to the short-channel ballistic limit. Scaling models are incorporated to accurately describe 2D electrostatic effects. Cryogenic operation is modeled through the inclusion of band-tail states and temperature-dependent mobility and threshold voltage. The proposed model is validated against experimental data from the fabricated OSFETs with multiple channel lengths and published measurements of 2DFETs, CNFETs, and cryogenic MOSFETs. Excellent agreement is demonstrated across diverse device architectures, operating conditions, and material systems.

physics.app-ph

Multiplexing approaches to thermoradiative signatureless communications

Using mid-infrared emission from semiconductor devices for covert communications remains a relatively unexplored and yet promising opportunity. The phenomenon of negative luminescence allows for a method of signatureless covert communications where the net infrared emission of an emitting optoelectronic device is balanced to be identical to the ambient thermal background. In this work we provide a practical demonstration of covert data transfer over a thermoradiative channel with data rates up to 100 kbps. In addition, we demonstrate several additional multiplexing techniques that make the proposed thermoradiative communications method more secure against interception by achieving zero instantaneous optical emission, while remaining detectable if a sufficiently spatially or spectrally discerning observation is utilised. Finally, we discuss various application scenarios in which the proposed methods can be used to achieve secure signatureless communications.

physics.app-ph