Superconducting Gap Engineering in Tantalum-Alloy-Based Resonators

Abstract

Utilizing tantalum (Ta) in superconducting circuits has led to significant improvements, such as high qubit lifetimes and quality factors in both qubits and resonators, underscoring the importance of material optimization in quantum device performance. In this work, we explore superconducting gap engineering in Ta-based devices as a strategy to expand the range of viable host materials. By alloying 20 atomic percent hafnium (Hf) into Ta thin films, we achieve a superconducting transition temperature ($T_c$) of 6.09~K, as measured by DC transport, reflecting an increased superconducting gap. We systematically vary deposition conditions to control film orientation and transport properties of the Ta-Hf alloy films. The enhancement in $T_c$ is further confirmed by microwave measurements at millikelvin temperatures. Despite the 40\% increase in $T_c$ relative to pure Ta, the loss contributions from two-level systems (TLS) and quasiparticles (QPs) remain unchanged in the low-temperature regime. These findings highlight the potential of material engineering to improve superconducting circuit performance and motivate further exploration of engineered alloys for quantum technologies.