Criticality in memristor devices and the creation of deep memory

Stavros G. Stavrinides; Yiannis Contoyiannis

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arXiv · 2601.09464

Criticality in memristor devices and the creation of deep memory

Stavros G. Stavrinides·Yiannis Contoyiannis

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Abstract

In the present work we describe a way to assess memory capability of real devices, while proposing to the engineering community what to pursue to create devices with deep associated memory capability. The study of the signal produced by a real memristor nano-device focused on the description in terms of the Landau ϕ4 theory for the critical phenomena in finite systems. This further allowed the utilization of the property of the anomalous enhancement of the autocorrelation function when a system is on the Spontaneous Symmetry Breaking (SSB), for improving the quantity of the demonstrated memory, while simultaneously maintaining a very good quality, as this is expressed by the stability of the autocorrelation function. In this proof-of-concept case, the morphology of the signal allowed us to impose the appropriate modifications on the signal so that we finally show how to get very close to the characteristics of the SSB and thus achieve our goal to get as close as possible to the ideal behavior of a Memristor that yields deep memory. Finally, we provide proof of the stability of memristor's operation by showing that solitons "follow" as a skeleton structure the experimentally derived time series.

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BibTeX RIS

Stavros G. Stavrinides, Yiannis Contoyiannis. 2026-01-14. Criticality in memristor devices and the creation of deep memory. https://arxiv.org/abs/2601.09464

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