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arXiv · 2603.19513

Quantum transfer in high-root topological insulators

G. F. Moreira·A. Lykholat·R. G. Dias·A. M. Marques
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Abstract

This paper focuses on the quantum state transfer in a one-dimensional (1D) high-root topological insulator (HRTI) with an arbitrary number of domains. We present the possibility of having multiple transfer processes in the same model due to the existence of various edge states in distinct energy gaps, which may benefit recent (de)multiplexing technologies. We also derived the relations between transfer times of different root models and different gaps in the same model. We show how the exponential decay in transfer time caused by the fragmentation of a parent chain into domains can be generalized to its higher-root versions while maintaining a high transfer fidelity, and how the increasing number of domain wall states leads to a higher transfer fidelity against a general disorder regime due to the topological protection inherited from the parent model.

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G. F. Moreira, A. Lykholat, R. G. Dias, A. M. Marques. 2026-03-19. Quantum transfer in high-root topological insulators. https://arxiv.org/abs/2603.19513

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