Mixed potential for nonlinear RLC circuits with memristors

Abstract

In two seminal articles published in 1964, Brayton and Moser introduced the concept of a mixed potential as a fundamental theoretic tool to describe and analyze a class RLC of nonlinear circuits containing resistors, capacitors and inductors. In this paper, it is shown for the first time that a mixed potential can be introduced for a class RLCM of RLC circuits containing also memristors. This is possible provided a memristor circuit is analyzed not in the traditional voltage-current domain but rather in the flux-charge domain. The flux-charge analysis method (FCAM) plays a crucial role in the extension, in particular, a key step is an equivalence principle established via FCAM between an RLCM circuit in the flux-charge domain and a nonlinear RLC circuit in the voltage-current domain. Several examples are discussed where the mixed potential is explicitly found. These include basic circuits with memristors, such as Chua's circuit with a memristor and also large-scale memristor arrays with a neural architecture. This paper is mainly devoted to the introduction of a mixed potential for memristor circuits and the study of its main theoretic properties, as the possibility to write the circuit state equations in the flux-charge domain in an effective and compact form via the mixed potential. In a companion paper [1], the mixed potential is used to obtain in a systematic way Lyapunov-like results on convergence of RLCM circuits. Those results will extend existing results on convergence that do not cover the important case where there is the simultaneous presence of capacitors and inductors in a memristor circuit.