Fast-Neutron Irradiation Effect in Heteroepitaxial $β$-Ga$_2$O$_3$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

Abstract

In this work, we investigate the response of Ni/$β$-Ga$_2$O$_3$ Schottky barrier diodes fabricated on c-plane sapphire to fast-neutron irradiation up to a fluence of $1\times10^{15}$ n$\cdot$cm$^{-2}$. The LPCVD-grown heteroepitaxial structure consists of an unintentionally doped buffer, an n$^{+}$ contact layer, and an n-type drift layer, with mesa isolation realized by plasma-free Ga-assisted LPCVD etching. Prior to irradiation, the devices exhibit a turn-on voltage of 1.20 V, specific on-resistance of 8.43 m$Ω\cdot$cm$^2$, ideality factor of 1.32, and Schottky barrier height of 1.29 eV. Following irradiation, the devices remain operational, although the forward current decreases, the turn-on voltage increases to 2.40 V, and the barrier height increases to 1.34 eV. Capacitance-voltage measurements reveal a $\sim$50% reduction in net donor concentration, corresponding to a carrier-removal rate of $\sim$105 cm$^{-1}$. Temperature-dependent measurements from 25 to 250 $^\circ$C confirm that thermionic emission remains the dominant transport mechanism and show significant suppression of reverse leakage current after irradiation. The breakdown voltage increases from 101 to 135 V, consistent with neutron-induced donor compensation. TCAD simulations show a more uniform electric-field distribution and reduced field crowding at the Schottky edge after irradiation. These results provide insight into neutron-induced donor compensation in heteroepitaxial $β$-Ga$_2$O$_3$ and demonstrate the ability of LPCVD-grown $β$-Ga$_2$O$_3$ Schottky diodes on sapphire to maintain stable operation under high-fluence neutron environments relevant to space and nuclear electronics.