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arXiv · 2606.18522

Piezoelectric resonators in thin-film barium titanate from room temperature to millikelvin

Hao Tian·Shu-Yuan Chang·Nuha Akhtar·Kasra Sardashti·Mohammad Mirhosseini
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Abstract

Ferroelectric materials, with their strong nonlinearities, underpin key technologies across radio-frequency (RF) signal processing, optical communications, and emerging quantum systems. Barium titanate (BTO) is a notable example, combining strong piezoelectric and electro-optic responses. While bulk BTO has been studied for decades, the piezoelectric properties of its recently available thin films, and their behavior at the millikelvin temperatures relevant to quantum hardware, remain largely unexplored. Here, we fabricate and characterize surface acoustic wave (SAW) resonators on thin-film BTO. The measured devices exhibit high electromechanical coupling (k2eff 0.14 at 5.2 GHz) and operate up to 7.8 GHz. From these measurements, combined with finite-element modeling of the multi-domain microstructure, we extract an effective piezoelectric coefficient d33eff of 53 pC/N, comparable to bulk BTO. Exploiting the intrinsic ferroelectricity, we further demonstrate low-voltage switching with a fast (100 ns) response, attractive for reconfigurable RF front-ends and parametric amplifiers. Extending these measurements to millikelvin temperatures, we find that the piezoelectric response persists, with d33eff 19 pC/N, pointing to the potential of BTO for piezoelectric coupling in superconducting quantum circuits. These results position thin-film BTO as a promising piezoelectric platform for both classical and quantum information technologies.

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Hao Tian, Shu-Yuan Chang, Nuha Akhtar, Kasra Sardashti, Mohammad Mirhosseini. 2026-06-16. Piezoelectric resonators in thin-film barium titanate from room temperature to millikelvin. https://arxiv.org/abs/2606.18522

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