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arXiv · 2607.00110

Optically Active Single Hole Spin in ZnSe

Amirehsan Alizadehherfati·Yuxi Jiang·Kelsey J. Mirrielees·Nils von den Driesch·Christine Falter·Yurii Kutovyi·Amirehsan Boreiri·Douglas L. Irving·Alexander Pawlis·Edo Waks
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Abstract

Semiconductor hole spins offer a pathway to extended coherence times by decoupling from nuclear magnetic noise, while their spin-orbit coupling enables fast all-electrical control. In ZnSe, however, realizing this potential has been limited by p-doping challenges. Here, we circumvent this limit by optically activating acceptors within the ZnSe quantum well. We isolate a single-hole spin bound to a shallow acceptor, confirmed by antibunching and accessed via the fast (244 ps) radiative recombination of a bound exciton. Magnetic and Raman spectroscopy of the ground state reveal an effective hole g-factor of 0.7 and an optical resonance linewidth of 26.7 GHz. Complementary first-principles simulations, together with the experimental results, provide evidence that points toward nitrogen as the most likely acceptor impurity. These results introduce a promising new platform for optically active spin qubits and single-photon sources in ZnSe.

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Amirehsan Alizadehherfati, Yuxi Jiang, Kelsey J. Mirrielees, Nils von den Driesch, Christine Falter, Yurii Kutovyi, Amirehsan Boreiri, Douglas L. Irving, Alexander Pawlis, Edo Waks. 2026-08-03. Optically Active Single Hole Spin in ZnSe. https://arxiv.org/abs/2607.00110

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