Magnetophonon Resistance Oscillations in Structures with a GaAs Quantum Well and Barriers of AlAs/GaAs$\langleδ$-Si$\rangle$ Superlattices

Abstract

Magnetophonon resistance oscillations (MPR) associated with the resonant scattering of electrons by optical phonons at temperatures of 77-240 K, as well as resonant scattering of electrons by acoustic phonons (PIRO) at temperatures of 10-25 K, were investigated in the same samples featuring a GaAs quantum well and AlAs/GaAs superlattice barriers doped with Si. The study of MPR demonstrated that resonant electron scattering occurs on bulk longitudinal optical phonons and does not depend on the dimensionality of the system or inter-subband transitions in systems with two subbands of size quantization. However, the amplitude of the oscillation with number $N=1$ in two-dimensional structures depends on the interplay of scattering mechanisms, which, in turn, is influenced by the structure of the system. As for PIRO, in samples with two size quantization subbands, resonant electron scattering by longitudinal acoustic phonons is observed against the background of inter-subband transitions (MISO), leading to their interference.