Active Passivation Tunes Hotspot Locations in GaN Transistors with In Situ Thermal Mechanical Visualization

Abstract

Efficient thermal dissipation has become critical in emerging electronic devices. However, most existing studies have primarily focused on engineering heat dissipation pathways, largely overlooking the intrinsic behavior of the heat source itself. We demonstrate an active passivation technology that proactively tunes hotspot locations in GaN transistors. By adjusting the active passivation layer length, the hotspot is shifted from the gate edge to the drain-side AP edge, establishing a clear one-to-one spatial correlation. In-situ thermal-mechanical visualization via micro-Raman thermography, combined with multi-physics electro-thermal-mechanical simulations, directly captures the spatial redistribution of both temperature and thermal stress profiles. Electrical analysis confirms that this hotspot migration is driven by the spatial shift of the peak electric field and localized Joule heating. This proactive heat-source tuning strategy provides critical design guidelines for power electronics.