Search arXivSearch

arXiv · 2609.04951

Cascade spin dynamics of excitons localized in indirect-band-gap (In,Al)As/AlAs quantum dots with type-I band alignment

Abstract

We investigate the spin dynamics of excitons localized in type I (In,Al)As/AlAs quantum dots with an indirect in momentum space band structure. Polarized selective photoluminescence spectroscopy, i.e. fluorescence line narrowing, under magnetic fields up to 5 T applied in the Faraday geometry is employed. The experiment reveals a cascade spin evolution process of excitons in the indirect band-gap quantum dots: an initial short term spin dynamics associated with excited direct exciton states possessing a large oscillator strength is followed by electron relaxation into the X valley of the Brillouin zone and subsequent long term spin dynamics of indirect excitons. The two step mechanism manifests itself in the distinct features of the magnetic field dependences of photoluminescence: two component recovery of optical orientation, two component linear to circular polarization conversion and the presence of the linear polarization plane rotation. At the same time, suppression of the optical alignment shows one-component behavior governed by the spin dynamics of the indirect exciton states. Within the pseudospin formalism, we derive analytical expressions that quantitatively describe the observed dependences and yield estimates for the anisotropic exchange splitting: 210 μeV for direct excitons and 1.3 μeV for indirect excitons. Further analysis using the density matrix formalism agrees well with the pseudospin model calculations and shows that the finite optical orientation at zero magnetic field is due to comparable magnitudes of the anisotropic splitting of the indirect exciton states and the splitting of the X-valley electron states caused by the hyperfine interaction with nuclei.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

S. V. Nekrasov, I. V. Kalitukha, A. A. Golovatenko, Ya. A. Kuznetsova, N. O. Mikhailenko, M. D. Ragoza, T. S. Shamirzaev, Yu. G. Kusrayev. 2026-09-04. Cascade spin dynamics of excitons localized in indirect-band-gap (In,Al)As/AlAs quantum dots with type-I band alignment. https://arxiv.org/abs/2609.04951

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Benzo-bis(imidazole) self-assembled monolayers molecular junctions in meta or para conformation: effects of protonation on the electrical and thermal conductances

We report the thermal conductances of molecular junctions made of self-assembled monolayers of benzo-bis(imidazole) molecules, without side groups or functionalized with two phenylamine side groups. In the two cases, when the molecules are connected to the electrodes by thiol anchoring groups in the meta-position, the thermal conductance is decreased compared to the same molecules connected in the para-position (ca. 16-29 nW/K and ca. 37-40 nW/K, respectively) in agreement with the theoretically predicted phonon interference effect in molecular junctions. Upon protonation, the thermal conductances of the meta-connected molecular junction increase by about 50% (reversible behavior upon deprotonation). The fact that only the thermal conductance of the meta-connected molecular junction is sensitive to the protonation/deprotonation is tentatively related to modifications of the structural organization of the molecules in the monolayer, which modifies the thermal conductance at the molecule/electrode interfaces. The electrical conductance is lower for the meta-connected molecule than for the para-connected one, due to destructive quantum interferences, as expected and reported for other molecular junctions. The conductance further decreases (reversibly) upon protonation. The energy position of the molecular orbital involved in the electron transport is not modified by the protonation and the decrease in current is related to changes in the molecule organization in the monolayer, which modulate the electronic coupling energy at the molecule/electrode interfaces.

cond-mat.mes-hall

Hydrodynamics of two-dimensional electrons due to scattering by disorder

The hydrodynamic regime of electron transport, induced by fast inter-electron collisions, was discovered in high-quality nanostructures in recent ten years. However, signs of hydrodynamic transport, primarily, the giant negative magnetoresistance, were observed even at very low temperatures, when electron-electron scattering is too weak to affect the transport. To address this puzzle, here we develop a theory of mixed, hydrodynamic and non-Markovian, magnetotransport of two-dimensional electrons at zero temperature in samples with weak but still important disorder. Namely, we account for both the memory effects at electron scattering by localized defects in magnetic field and an unconventional viscosity effect due to electron scattering by defects in bulk and by rough sample edges. Solution of the model yields a strong negative magnetoresistance, which exhibits at zero magnetic field a sharp maximum in narrower samples or a blunt maximum in wider samples. This and other our results explain various properties of the giant negative magnetoresistance observed on ultra-high-quality GaAs quantum wells, thereby we apparently reveal the nature of low-temperature magnetotransport in these systems.

cond-mat.mes-hall

Symplectic Hopf Insulator: Delicate Topology in Bosonic Bogoliubov-de Gennes Systems

Recent advances in topological phases have highlighted the role of symplectic (Krein-space) topology in the classification of bosonic Bogoliubov-de Gennes (BBdG) systems. In this work, we construct a BBdG realization of Hopf topology, which we dub the symplectic Hopf insulator, starting from a microscopic Bose-Hubbard generalization of the Moore-Ran-Wen model with weak on-site interactions treated within a Bogoliubov approximation. The resulting BBdG system admits a symplectic Hopf invariant, which we show to be integer-quantized for isolated bands. We establish that this topology is intrinsically delicate, requiring exactly two bosonic modes per unit cell, while remaining robust against weak interactions over a range of mass parameters. Upon terminating the three-dimensional insulator at a boundary, we find topologically protected in-gap surface states at finite excitation energy, whose protection is itself delicate. Our results establish the symplectic Hopf insulator as a robust yet delicate topological phase in weakly interacting bosonic systems lying beyond the tenfold-way classification.

cond-mat.mes-hall