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arXiv · 2609.12662

Design and Finite-Element Analysis of a New Inclined Blade-Electrode Architecture for Trapped-Ion Quantum Information Processing

Nahiyan Archa·Abhinand P·Ahammed Shabeeb·Nikhil Kumar
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Abstract

The development of scalable quantum technologies requires ion-trap architectures that provide strong and stable confinement while minimizing motional heating caused by electric-field noise. Trapped-ion systems offer long coherence times and high-fidelity quantum control; however, anomalous motional heating from electrode surfaces can limit their performance. This study presents a finite-element analysis of a novel inclined ion-trap architecture, focusing on the effects of electrode geometry and blade separation on confinement strength, secular frequencies, motional heating, thermal response, and RF stability. Five trap inclinations were investigated using three-dimensional electrostatic simulations for blade separations of 5 to 35 um. The RF electric-field distribution was used to determine the effective pseudopotential, trap depth, secular frequencies, and normal modes. An empirical electric-field-noise model was then used to estimate the motional heating rate for frequency-noise exponents alpha = 3, 3.5, and 4. The results reveal a trade-off between confinement strength and ion-electrode distance. Blade separations of approximately 25 to 35 um provide a favorable design regime. At 25 um, the predicted heating rate is approximately 127 to 135 quanta per second for alpha = 3, but the RF stability margin is lower (qmax approximately 1.9). At 35 um, the stability is substantially improved (qmax approximately 0.52), while the heating rate increases to approximately 1570 to 1820 quanta per second. These results provide design guidelines for optimizing inclined ion traps for future trapped-ion quantum-information architectures.

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Nahiyan Archa, Abhinand P, Ahammed Shabeeb, Nikhil Kumar. 2026-09-11. Design and Finite-Element Analysis of a New Inclined Blade-Electrode Architecture for Trapped-Ion Quantum Information Processing. https://arxiv.org/abs/2609.12662

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