Search arXivSearch

arXiv · 2609.19494

Giant Resonant Reflection Gain from Injection-Induced Quenching in a Tunnel Diode

Abstract

Negative-resistance microwave oscillators can simultaneously sustain autonomous oscillations and coherently scatter electromagnetic waves, enabling active reflection beyond conventional linear amplification. Here we demonstrate giant resonant reflection gain from synchronization-induced phase localization in a self-sustained tunnel diode oscillator operating near 2.96 GHz. Weak resonant RF injection drives a transition from a broadband free running state to a phase localized narrowband reflected carrier. The resulting reflected enhancement reaches 83.1dB relative to the injected signal and is accompanied by greater than order of magnitude linewidth collapse, nonlinear injection pulling, and a synchronization bandwidth of 15.84 kHz. Time resolved spectrograms directly resolve injection locking and frequency entrainment, while noisy Stuart Landau simulations reproduce the observed spectral concentration and detuning dependent gain roll off near the Hopf instability. Artificially increasing phase diffusion with broadband bias noise suppresses the reflected enhancement, confirming synchronization-induced quenching of phase fluctuations as the origin of the giant coherent reflection gain.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Darmindra Arumugam, Jack Bush, Brook Feyissa. 2026-09-16. Giant Resonant Reflection Gain from Injection-Induced Quenching in a Tunnel Diode. https://arxiv.org/abs/2609.19494

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Janus Dipoles: Fundamentals, Realizations, and Emerging Applications

The Janus dipole - featuring orthogonally oriented electric and magnetic dipoles with a 90-degree phase difference - has emerged as a powerful paradigm for wave manipulation. Unlike traditional Huygens dipoles used for directional control, this unique configuration exhibits strongly asymmetric, face-selective near-field behavior while maintaining a quasi-isotropic far-field radiation pattern. These remarkable properties make the Janus dipole an essential platform for directional wave shaping, with wide-ranging applications in on-chip photonics, quantum interactions, and wireless power transfer. This review systematically traces the rapid development of the Janus dipole from its foundational theoretical inception to its diverse implementation platforms across optical, microwave, and acoustic frequencies. In this paper, we explore the governing principles, classify realization strategies into passive Janus dipoles, active Janus dipoles, and advanced near-field coupling control, and highlight emerging frontiers. By bridging foundational electrodynamics with advanced device engineering, this paper serves as an essential reference and roadmap for researchers designing next-generation, highly integrated, and compact wave-manipulation systems.

physics.app-ph

Evaluation of effective wave velocities in polycrystalline materials using the ultrasonic reflection matrix

In-depth characterization of heterogeneous materials has long been a challenge in non-destructive testing. Here, a method is proposed to determine the elastic constants of metallic polycrystalline materials using back-scattered ultrasound. The waves scattered by the microstructure are analyzed to image the effective bulk velocities. To this end, a reflection matrix is acquired with an array of transducers. The projection of this matrix onto a focused basis is used to estimate an average point spread function. Optimizing this function with respect to the propagation model leads to an estimation of the longitudinal velocity. Additional treatments are developed to adapt the method to map the shear wave velocity. The local Poisson's ratio is then deduced from the ratio between those two velocities. Young's modulus and shear modulus can also be obtained assuming known densities. This matrix approach is experimentally validated on different polycrystalline materials. A sample displaying heterogeneous mechanical properties is then simulated to assess the accuracy and the resolution of the method. Its strengths and limitations are discussed, demonstrating its potential for quantitative non-destructive material characterization.

physics.app-ph

A Green's-function method for vertical thermal boundary conductance in anisotropic multilayers

Vertical thermal interfaces occur in both engineered and natural materials. Their vertical thermal boundary conductance can differ from the horizontal counterpart, requiring dedicated characterization. Yet current thermal metrology resolves vertical thermal boundary conductance only in restricted geometries such as two bulk media, for lack of an efficient forward solution that admits anisotropy, multilayers, and depth-dependent vertical thermal boundary conductance together. We present a Green's-function boundary integral equation (GBIE) method that couples transfer-matrix Green's functions to an interface-only integral equation for depth-dependent $G_v(z)$, supporting dissimilar orthotropic multilayers ($k_x\neq k_y\neq k_z$) on either side and horizontal conductance $G_h$. For anisotropic film-on-substrate multilayers with films from $1~μ\mathrm{m}$ to $100~\mathrm{nm}$, the GBIE agrees with three-dimensional finite element method (FEM) predictions to within one percent mean normalized phase and amplitude error, while running $29\text{--}210\times$ faster and reducing peak memory by factors of $120\text{--}450$ in single-core tests; a JIT-compiled JAX implementation reaches up to $4100\times$ on a matched 16-core comparison. The GBIE further reproduces a continuous film over a buried interface, representative of a thermoreflectance measurement, and a finite-depth interface with depth-dependent $G_v(z)$. The GBIE accommodates lateral-to-film-thickness ratios above $10^{5}$, where volumetric FEM can become computationally prohibitive. These results establish an efficient forward solution for vertical-interface heat transport in systems ranging from microelectronic device sidewalls to grain boundaries in polycrystalline solids.

physics.app-ph