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arXiv · 2609.39878

Multi-Branch Transport in a Back-gated WS$_2$ Transistor at Deep-Cryogenic Temperature

Megan Powell·Vilas Patil·Hazel Neill·Stephen O'Sullivan·Paul K. Hurley·Lida Ansari·Farzan Gity·Alessandro Rossi
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Abstract

Two-dimensional materials are promising candidates for electronic applications beyond the operating limits of conventional semiconductor technologies. Within this class, transition-metal dichalcogenides offer attractive properties for field-effect transistor operation, with tungsten disulphide (WS$_2$) emerging as a particularly promising material for operation at cryogenic temperatures. Here, we investigate the electrical performance of a back-gated multilayer WS$_2$ transistor at deep cryogenic temperature, down to 20 mK. The device remains strongly gate-tunable throughout the cryogenic regime, with an effective on/off current ratio exceeding $10^{5}$. Most notably, the low-temperature turn-on characteristics exhibit reproducible shoulder-like features, which we describe using a phenomenological model comprising multiple effective conduction branches operating in parallel.

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Megan Powell, Vilas Patil, Hazel Neill, Stephen O'Sullivan, Paul K. Hurley, Lida Ansari, Farzan Gity, Alessandro Rossi. 2026-09-30. Multi-Branch Transport in a Back-gated WS$_2$ Transistor at Deep-Cryogenic Temperature. https://arxiv.org/abs/2609.39878

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