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arXiv · 2611.02520

Continuous Kinetic Model of Counterion-Mediated Redox Switching in 14-Bit Molecular Memristors for Analog In-Memory Computing

Logan Larsh·Dhiman Biswas·Nazmus Saadat As-Saquib·Su-in Yi·Thirumalai Venkatesan·Mike Banad
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Abstract

Kinetic molecular memristors offer a compelling path toward high-density analog in-memory computing by achieving 14-bit precision, wherein discrete redox transitions and counterion displacements dictate non-volatile conductance across a deterministic energy landscape. However, integrating these nanoscale kinetics into macroscale circuit simulators has remained bottlenecked by derivative discontinuities and solver convergence failures. Here, we present a physics-inspired continuous kinetic model that bridges microscopic molecular transport with scalable circuit architectures. By casting discrete intramolecular states, counterion relaxation dynamics, and Marcus-Hush-Chidsey electron transfer rates into continuously differentiable state variables, we derive a robust, Spectre-compatible compact model and a matching vectorized Python solver. This work culminates in a unified computational platform to reliably predict the behavior of complex circuits built on these molecular memristors.

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Logan Larsh, Dhiman Biswas, Nazmus Saadat As-Saquib, Su-in Yi, Thirumalai Venkatesan, Mike Banad. 2026-11-02. Continuous Kinetic Model of Counterion-Mediated Redox Switching in 14-Bit Molecular Memristors for Analog In-Memory Computing. https://arxiv.org/abs/2611.02520

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