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Real-Axis Solution of Eliashberg Equations in Various Order-Parameter Symmetries and Tunneling Conductance of Optimally-Doped HTSC

Giovanni A. Ummarino·Renato S. Gonnelli·Dario Daghero
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Abstract

In the present work we calculate the theoretical tunneling conductance curves of SIN junctions involving high-Tc superconductors, for different possible symmetries of the order parameter (s, d, s+id, s+d, anisotropic s and extended s). To do so, we solve the real-axis Eliashberg equations in the case of an half-filled infinite band. We show that some of the peculiar characteristics of HTSC tunneling curves (dip and hump at eV > Delta, broadening of the gap peak, zero bias and so on) can be explained in the framework of the Migdal-Eliashberg theory. The theoretical dI/dV curves calculated for the different symmetries at T=4 K are then compared to various experimental tunneling data obtained in optimally-doped BSCCO, TBCO, HBCO, LSCO and YBCO single crystals. To best fit the experimental data, the scattering by non-magnetic impurities has to be taken into account, thus limiting the sensitivity of this procedure in determining the exact gap symmetry of these materials. Finally, the effect of the temperature on the theoretical tunneling conductance is also discussed and the curves obtained at T=2 K are compared to those given by the analytical continuation of the imaginary-axis solution.

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Giovanni A. Ummarino, Renato S. Gonnelli, Dario Daghero. 2000-07-03. Real-Axis Solution of Eliashberg Equations in Various Order-Parameter Symmetries and Tunneling Conductance of Optimally-Doped HTSC. https://doi.org/10.1142/s0217979200003149

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