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Metallic single-electron transistor without traditional tunnel barriers

V. A. Krupenin·A. B. Zorin·D. E. Presnov·M. N. Savvateev·J. Niemeyer
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Abstract

We report on a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips (~ 1um long) connecting a 1 um-long Al island to two Al outer electrodes. These resistors replace small-area oxide tunnel junctions of traditional SETs. Our transistor with a total asymptotic resistance of 110 kOhm showed a very sharp Coulomb blockade and reproducible, deep and strictly e-periodic gate modulation in wide ranges of bias currents I and gate voltages V_g. In the Coulomb blockade region (|V| < 0.5 mV), we observed a strong suppression of the cotunneling current allowing appreciable modulation curves V-V_g to be measured at currents I as low as 100 fA. The noise figure of our SET was found to be similar to that of typical Al/AlOx/Al single-electron transistors.

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V. A. Krupenin, A. B. Zorin, D. E. Presnov, M. N. Savvateev, J. Niemeyer. 2000-11-24. Metallic single-electron transistor without traditional tunnel barriers. https://doi.org/10.1063/1.1389758

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