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Effect of the In-Plane Magnetic Field on Conduction of the Si-inversion Layer: Magnetic Field Driven Disorder

V. M. Pudalov·G. Brunthaler·A. Prinz·G. Bauer
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Abstract

We compare the effects of temperature, disorder and parallel magnetic field on the metallic-like temperature dependence of the resistivity. We found a similarity between the effects of disorder and parallel field: the parallel field weakens the metallic-like conduction in high mobility samples and make it similar to that for low-mobility samples. We found a smooth continuous effect of the in-plane field on conduction, without any threshold. While conduction remains non-activated, the parallel magnetic field restores the same resistivity value as the high temperature does. This matching sets substantial constraints on the choice of the theoretical models developed to explain the mechanism of the metallic conduction and parallel field magnetoresistance in 2D carrier systems. We demonstrate that the data for magneto- and temperature dependence of the resistivity of Si-MOS samples in parallel field may be well described by a simple model of the magnetic field dependent disorder.

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V. M. Pudalov, G. Brunthaler, A. Prinz, G. Bauer. 2001-05-03. Effect of the In-Plane Magnetic Field on Conduction of the Si-inversion Layer: Magnetic Field Driven Disorder. https://arxiv.org/abs/cond-mat/0103087

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