Search arXiv⌕ Search

arXiv · cond-mat/0201026

Single and vertically coupled type II quantum dots in a perpendicular magnetic field: exciton groundstate properties

Abstract

The properties of an exciton in a type II quantum dot are studied under the influence of a perpendicular applied magnetic field. The dot is modelled by a quantum disk with radius $R$, thickness $d$ and the electron is confined in the disk, whereas the hole is located in the barrier. The exciton energy and wavefunctions are calculated using a Hartree-Fock mesh method. We distinguish two different regimes, namely $d<<2R$ (the hole is located at the radial boundary of the disk) and $d>>2R$ (the hole is located above and below the disk), for which angular momentum $(l)$ transitions are predicted with increasing magnetic field. We also considered a system of two vertically coupled dots where now an extra parameter is introduced, namely the interdot distance $d_{z}$. For each $l_{h}$ and for a sufficient large magnetic field, the ground state becomes spontaneous symmetry broken in which the electron and the hole move towards one of the dots. This transition is induced by the Coulomb interaction and leads to a magnetic field induced dipole moment. No such symmetry broken ground states are found for a single dot (and for three vertically coupled symmetric quantum disks). For a system of two vertically coupled truncated cones, which is asymmetric from the start, we still find angular momentum transitions. For a symmetric system of three vertically coupled quantum disks, the system resembles for small $d_{z}$ the pillar-like regime of a single dot, where the hole tends to stay at the radial boundary, which induces angular momentum transitions with increasing magnetic field. For larger $d_{z}$ the hole can sit between the disks and the $l_{h}=0$ state remains the groundstate for the whole $B$-region.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

K. L. Janssens, B. Partoens, F. M. Peeters. 2002-01-03. Single and vertically coupled type II quantum dots in a perpendicular magnetic field: exciton groundstate properties. https://doi.org/10.1103/physrevb.66.075314

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Surface effects on the plasmons in two-dimemsional heterostructures: Application to tilted semi-Dirac materials

We derived closed-form analytic expressions for the plasmon dispersion equations for two and three monolayers embedded in a non-uniform dielectric medium with a surface. There is no electron tunneling between the layers or hybridization of the layer polarizability. The dispersion equations are deduced from calculated expressions for the corresponding surface response functions (SRFs) generated by a frequency-dependent external polarized electromagnetic field. The SRF is calculated by employing Maxwell's equations in conjunction with linear response theory.The dispersion functions reduce to well-known results for two and three monolayers embedded in a bulk medium with a uniform dielectric background. We examine the role played by a surface (i.e., homogeneous versus inhomogeneous dielectric background screening), for gapped tilted semi-Dirac materials (TSDMs) with half-linear, half-parabolic spectrums whose energy bands are tilted, anisotropic in wave vector space, and a gap is induced. The number of plasmon branches is always equal to the number of monolayer. However, the separation between these branches depends on the distance between the layers and crucially on the chosen dielectric material between the layers and whether there is air or a substrate surrounding the layered structure. For gapped TSDM, the Landau damping, i.e., Plasmon lifetime, varies from branch to branch as well as along the branch for a chosen wave vector direction. We examine these novel behaviors for two and three gapped TSDM monolayers assuming different values for the dielectric background. Our results could be useful for comparing theory with experimental data from electron energy loss spectroscopy (EELS) data.

cond-mat.mes-hall↗

Microscopic Modeling of Surface Roughness Scattering in Inversion Layers of MOSFETs Based on Ando's Linear Model

Surface roughness (SR) scattering in inversion layers of bulk-MOSFETs is studied from the atomistic and quantum-mechanical viewpoints. Contrary to the usual macroscopic landscape of the roughness deviation, we introduce a stochastic deviation at each atomic site to take account of the discontinuity of the spatial derivatives of the electrostatic potential and wave-function at the semiconductor/dielectric interface, leading to an ambiguity in roughness positions. It is shown that SR parameters are consistent with those known from the experiments and, thus, there is no discrepancy problem associated with the roughness parameters in our model. The self-consistent scattering rate is derived under the framework of the Green's functions scheme: We find that the SR scattering rates are intrinsically nonlocal (non-diagonal) with respect to subband indices and greatly deviate from those based on Fermi's golden rule in the regimes of strong effective fields and/or low electron energies. As a result, the conventional SR model tends to underestimate the surface-roughness-limited mobility.

cond-mat.mes-hall↗

Comparative Evaluation of Encapsulation Methods for Endohedral Doping of Single-Wall Carbon Nanotubes

Single wall carbon nanotubes (SWCNTs) are promising building blocks for nanoelectronic and optoelectronic devices, yet reliable and stable doping, particularly n type, remains challenging due to strong environmental sensitivity and competing extrinsic effects. Encapsulation of charge transfer molecules within the SWCNT cavity offers a promising route to stable doping while preserving the nanotubes outer surface for subsequent processing. Here, we systematically investigate the filling of arc discharge SWCNTs with the electron donor tetrathiafulvalene and electron acceptor tetracyanoquinodimethane, comparing different methods for filling, including melt filling, solution reflux, and vacuum phase sublimation. We follow the entire processing workflow from raw, unfilled powders to aqueous dispersions and employ density gradient ultracentrifugation to separate filled from empty nanotubes as well as metallic from semiconducting ones. Encapsulation efficiency and electronic modification are assessed using absorption spectroscopy, resonant Raman scattering, thermogravimetric analysis, X-ray photoelectron spectroscopy and electron paramagnetic resonance. Finally, we introduce a complementary vacuum-phase method that removes externally adsorbed molecules without extensive solvent washing, enabling cleaner encapsulated systems.

cond-mat.mes-hall↗