Low-frequency noise as a source of dephasing of a qubit

Abstract

With the growing efforts in isolating solid-state qubits from external decoherence sources, the material-inherent sources of noise start to play crucial role. One representative example is electron traps in the device material or substrate. Electrons can tunnel or hop between a charged and an empty trap, or between a trap and a gate electrode. A single trap typically produces telegraph noise and can hence be modeled as a bistable fluctuator. Since the distribution of hopping rates is exponentially broad, many traps produce flicker-noise with spectrum close to 1/f. Here we develop a theory of decoherence of a qubit in the environment consisting of two-state fluctuators, which experience transitions between their states induced by interaction with thermal bath. Due to interaction with the qubit the fluctuators produce 1/f-noise in the qubit's eigenfrequency. We calculate the results of qubit manipulations - free induction and echo signals - in such environment. The main problem is that in many important cases the relevant random process is both non-Markovian and non-Gaussian. Consequently the results in general cannot be represented by pair correlation function of the qubit eigenfrequency fluctuations. Our calculations are based on analysis of the density matrix of the qubit using methods developed for stochastic differential equations. The proper generating functional is then averaged over different fluctuators using the so-called Holtsmark procedure. The analytical results are compared with simulations allowing checking accuracy of the averaging procedure and evaluating mesoscopic fluctuations. The results allow understanding some observed features of the echo decay in Josephson qubits.